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HM51W18165TT-7 PDF预览

HM51W18165TT-7

更新时间: 2024-10-26 05:36:11
品牌 Logo 应用领域
尔必达 - ELPIDA 存储内存集成电路光电二极管动态存储器
页数 文件大小 规格书
35页 598K
描述
16 M EDO DRAM (1-Mword x 16-bit) 4 k Refresh/1 k Refresh

HM51W18165TT-7 技术参数

是否Rohs认证:不符合生命周期:Obsolete
零件包装代码:TSOP2包装说明:TSOP2, TSOP44/50,.46,32
针数:50Reach Compliance Code:unknown
ECCN代码:EAR99HTS代码:8542.32.00.02
风险等级:5.91Is Samacsys:N
访问模式:FAST PAGE WITH EDO最长访问时间:70 ns
其他特性:RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESHI/O 类型:COMMON
JESD-30 代码:R-PDSO-G44JESD-609代码:e0
长度:20.95 mm内存密度:16777216 bit
内存集成电路类型:EDO DRAM内存宽度:16
功能数量:1端口数量:1
端子数量:44字数:1048576 words
字数代码:1000000工作模式:ASYNCHRONOUS
最高工作温度:70 °C最低工作温度:
组织:1MX16输出特性:3-STATE
封装主体材料:PLASTIC/EPOXY封装代码:TSOP2
封装等效代码:TSOP44/50,.46,32封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, THIN PROFILE峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V认证状态:Not Qualified
刷新周期:1024座面最大高度:1.2 mm
自我刷新:NO最大待机电流:0.001 A
子类别:DRAMs最大压摆率:0.15 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:COMMERCIAL
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子节距:0.8 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED宽度:10.16 mm
Base Number Matches:1

HM51W18165TT-7 数据手册

 浏览型号HM51W18165TT-7的Datasheet PDF文件第2页浏览型号HM51W18165TT-7的Datasheet PDF文件第3页浏览型号HM51W18165TT-7的Datasheet PDF文件第4页浏览型号HM51W18165TT-7的Datasheet PDF文件第5页浏览型号HM51W18165TT-7的Datasheet PDF文件第6页浏览型号HM51W18165TT-7的Datasheet PDF文件第7页 
HM51W16165 Series  
HM51W18165 Series  
16 M EDO DRAM (1-Mword × 16-bit)  
4 k Refresh/1 k Refresh  
E0153H10 (Ver. 1.0)  
(Previous ADE-203-650D (Z))  
Jul. 6, 2001 (K)  
Description  
The HM51W16165 Series, HM51W18165 Series are CMOS dynamic RAMs organized as 1,048,576-word  
× 16-bit. They employ the most advanced CMOS technology for high performance and low power.  
HM51W16165 Series, HM51W18165 Series offer Extended Data Out (EDO) Page Mode as a high speed  
access mode. They have package variations of standard 400-mil 42-pin plastic SOJ and 400-mil 50-pin  
plastic TSOP.  
Features  
Single 3.3 V (±0.3 V)  
Access time: 50 ns/60 ns/70 ns (max)  
Power dissipation  
Active mode : 396 mW/360mW/324 mW (max) (HM51W16165 Series)  
: 684 mW /612 mW /540 mW (max) (HM51W18165 Series)  
Standby mode : 7.2 mW (max)  
: 0.54 mW (max) (L-version)  
EDO page mode capability  
Refresh cycles  
4096 refresh cycles : 64 ms (HM51W16165 Series)  
: 128 ms (L-version)  
1024 refresh cycles : 16 ms (HM51W18165 Series)  
: 128 ms (L-version)  
4 variations of refresh  
RAS-only refresh  
CAS-before-RAS refresh  
Hidden refresh  
Self refresh (L-version)  
2CAS-byte control  
Elpida Memory, Inc. is a joint venture DRAM company of NEC Corporation and Hitachi, Ltd.  

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