Datasheet > HM51W18160J-6

HM51W18160J-6

更新时间： 2024-10-25 23:56:15

品牌	Logo	应用领域
其他 - ETC		内存集成电路光电二极管动态存储器
页数	文件大小	规格书
33页	399K
描述
x16 Fast Page Mode DRAM

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数据手册

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HM51W18160J-6 数据手册

HM51W16160 Series

HM51W18160 Series

16 M FP DRAM (1-Mword × 16-bit)

4 k Refresh/1 k Refresh

ADE-203-635E (Z)

Rev. 5.0

Nov. 1997

Description

The Hitachi HM51W16160 Series, HM51W18160 Series are CMOS dynamic RAMs organized as

1,048,576-word × 16-bit. They employ the most advanced CMOS technology for high performance and

low power. The HM51W16160 Series, HM51W18160 Series offer Fast Page Mode as a high speed access

mode. They have package variations of 42-pin plastic SOJ and 50-pin plastic TSOP II

Features

•

Single 3.3 V (±0.3 V)

Access time: 60 ns/70 ns (max)

Power dissipation

Active mode

: 360 mW/324 mW (max) (HM51W16160 Series)

:612 mW/540 mW (max) (HM51W18160 Series)

Standby mode : 7.2 mW (max)

: 0.54 mW (max) (L-version)

•

Fast page mode capability

Refresh cycles

4096 refresh cycles : 64 ms (HM51W16160 Series)

: 128 ms (L-version)

1024 refresh cycles : 6 ms (HM51W18160 Series)

: 28 ms (L-version)

•

4 variations of refresh

RAS-only refresh

CAS-before-RAS refresh

Hidden refresh

Self refresh (L-version)

•

2 CAS-byte control

Battery backup operation (L-version)

12 3 4 5 6 7...33

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