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HLX6256NSH PDF预览

HLX6256NSH

更新时间: 2024-11-01 03:42:11
品牌 Logo 应用领域
霍尼韦尔 - HONEYWELL /
页数 文件大小 规格书
12页 153K
描述
32K x 8 STATIC RAM Low Power SOI

HLX6256NSH 技术参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:DFP
包装说明:DFP, FL28,.5针数:28
Reach Compliance Code:unknownECCN代码:3A001.A.2.C
HTS代码:8542.32.00.41风险等级:5.43
最长访问时间:25 nsI/O 类型:COMMON
JESD-30 代码:R-CDFP-F28JESD-609代码:e0
长度:18.288 mm内存密度:262144 bit
内存集成电路类型:STANDARD SRAM内存宽度:8
功能数量:1端口数量:1
端子数量:28字数:32768 words
字数代码:32000工作模式:ASYNCHRONOUS
最高工作温度:125 °C最低工作温度:-55 °C
组织:32KX8输出特性:3-STATE
可输出:YES封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装代码:DFP封装等效代码:FL28,.5
封装形状:RECTANGULAR封装形式:FLATPACK
并行/串行:PARALLEL峰值回流温度(摄氏度):NOT SPECIFIED
电源:3.3 V认证状态:Not Qualified
筛选级别:38535V;38534K;883S座面最大高度:3.048 mm
最大待机电流:0.0003 A最小待机电流:1.7 V
子类别:SRAMs最大压摆率:0.003 mA
最大供电电压 (Vsup):3.6 V最小供电电压 (Vsup):3 V
标称供电电压 (Vsup):3.3 V表面贴装:YES
技术:CMOS温度等级:MILITARY
端子面层:Tin/Lead (Sn/Pb)端子形式:FLAT
端子节距:1.27 mm端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIED总剂量:1M Rad(Si) V
宽度:12.7 mmBase Number Matches:1

HLX6256NSH 数据手册

 浏览型号HLX6256NSH的Datasheet PDF文件第2页浏览型号HLX6256NSH的Datasheet PDF文件第3页浏览型号HLX6256NSH的Datasheet PDF文件第4页浏览型号HLX6256NSH的Datasheet PDF文件第5页浏览型号HLX6256NSH的Datasheet PDF文件第6页浏览型号HLX6256NSH的Datasheet PDF文件第7页 
Military & Space Products  
32K x 8 STATIC RAM—Low Power SOI  
HLX6256  
FEATURES  
RADIATION  
OTHER  
• Fabricated with RICMOSIV Silicon on Insulator (SOI)  
0.55 µm Low Power Process  
• Read/Write Cycle Times  
17 ns (Typical)  
25 ns (-55 to 125°C)  
• Total Dose Hardness through 1x106 rad(SiO2)  
• Neutron Hardness through 1x1014 cm-2  
• Typical Operating Power <10 mW/MHz  
• Asynchronous Operation  
• Dynamic and Static Transient Upset Hardness  
through 1x109 rad(Si)/s  
• JEDEC Standard Low Voltage  
CMOS Compatible I/O  
• Dose Rate Survivability through 1x1011 rad(Si)/s  
• Soft Error Rate of <1x10-10 upsets/bit-day  
• Latchup Free  
• Single 3.3 V 0.3V Power Supply  
• Packaging Options  
- 28-Lead Flat Pack (0.500 in. x 0.720 in.)  
- 28-Lead DIP, MIL-STD-1835, CDIP2-T28  
- 36-Lead Flat Pack (0.630 in. x 0.650 in.)  
- Various Multi-Chip Module (MCM) Configurations  
GENERAL DESCRIPTION  
The 32K x 8 Radiation Hardened Static RAM is a high  
performance 32,768 word x 8-bit static random access  
memory with industry-standard functionality. It is fabri-  
cated with Honeywell’s radiation hardened technology,  
and is designed for use in low voltage systems operating in  
radiation environments. The RAM operates over the full  
military temperature range and requires only a single 3.3 V  
0.3V power supply. The RAM is compatible with JEDEC  
standard low voltage CMOS I/O. Power consumption is  
typically less than 10 mW/MHz in operation, and less than  
2 mW when de-selected. The RAM read operation is fully  
asynchronous,withanassociatedtypicalaccesstimeof14  
ns at 3.3 V.  
Honeywell’senhancedSOIRICMOSIV(RadiationInsen-  
sitiveCMOS)technologyisradiationhardenedthroughthe  
use of advanced and proprietary design, layout and pro-  
cess hardening techniques. The RICMOSIV low power  
process is a SIMOX CMOS technology with a 150 Å gate  
oxideandaminimumdrawnfeaturesizeof0.7µm(0.55µm  
effective gate length—Leff). Additional features include  
tungsten via plugs, Honeywell’s proprietary SHARP pla-  
narization process and a lightly doped drain (LDD) struc-  
ture for improved short channel reliability. A 7 transistor  
(7T) memory cell is used for superior single event upset  
hardening, while three layer metal power bussing and the  
low collection volume SIMOX substrate provide improved  
dose rate hardening.  

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