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HL1566AF

更新时间： 2024-09-20 21:21:51

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HL1566AF 数据手册

HL1566AF

1.55 µm Laser Diode with EA Modulator

Description

The HL1566AF is a 1.55 µm InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-

quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser

diode. It is suitable as a light source for high-bit-rate, long haul fiberoptic communication systems,

such as 2.5 Gbps external modulation systems for up to 600 km.

Features

Long wavelength output: l p = 1550 nm Typ.

High extinction ratio: 13 dB Min. at V_R(EA)= –2 V

Fast pulse response: tr/tf £ 80 ps

Dynamic single longitudinal mode: Sr = 40 dB Typ.

Package: open air package (chip on carrier) with micro strip-line

232

12 3 4

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型号	品牌	获取价格	描述	数据表
HL1569AF	HITACHI	获取价格	Laser Diode, 1550nm, HERMETIC, LD/AF, 3 PIN
HL1569AF	RENESAS	获取价格	LASER DIODE, HERMETIC, LD/AF, 3 PIN
HL15703	HYNIX	获取价格	Hyundai Electronics Industries System IC Division
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