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HL1570AF PDF预览

HL1570AF

更新时间: 2024-11-10 20:09:27
品牌 Logo 应用领域
日立 - HITACHI 光电半导体
页数 文件大小 规格书
2页 11K
描述
Laser Diode, 1590nm

HL1570AF 数据手册

 浏览型号HL1570AF的Datasheet PDF文件第2页 
HL1570AF  
1.6 mm Laser Diode with EA Modulator  
Under Development  
Description  
The HL1570AF is a 1.6 mm (L-BAND) InGaAsP distributed-feedback laser diode (DFB-LD) with a multi-  
quantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode.  
It is suitable as a light source for high-bit-rate, long haul fiberoptic communication systems, such as 2.5  
Gbps external modulation systems for up to 600 km.  
Features  
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Long wavelength output: l p = 1600 nm Typ  
High extinction ratio: 15 dB Min at VR(EA) = –2 V  
Fast pulse response: tr/tf £ 80 ps  
Dynamic single longitudinal mode: Sr = 40 dB Typ  
Package: open air package (chip on carrier) with micro strip-line  
201  

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