Datasheet > HGD065NE4A

HGD065NE4A

更新时间： 2024-03-03 10:10:27

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	791K
描述
TO-252(或DPAK)

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HGD065NE4A 数据手册

Silicon N-Channel Power MOSFET

HGD065NE4A

○

General Description：

V_DSS

HGD065NE4A, the silicon N-channel Enhanced

VDMOSFETs, is obtained by the high density Trench

technology which reduce the conduction loss, improve

switching performance and enhance the avalanche energy.

This device is suitable for use as a load switch and PWM

applications. The package form is TO-252, which accords with the

RoHS standard.

I_D

R_{DS(ON)Typ VGS=10V}

5.2

mΩ

Features：

 Fast Switching



Low ON Resistance(Rdson≤6.5mΩ)

 Low Gate Charge

 Low Reverse transfer capacitances

 100% Single Pulse avalanche energy Test

Applications：

Power switch circuit of adaptor and charger.

E-cigarette,Electric Tool

Absolute（Tj= 25℃ unless otherwise specified）

Parameter

Symbol

V_DSS

Rating

Units

Drain-to-Source Voltage

Continuous Drain Current T_C= 25 °C

Continuous Drain Current T_C= 100 °C

Pulsed Drain Current

I_D

38.8

240

±18

115.5

I_DM

Gate-to-Source Voltage

V_GS

Single Pulse Avalanche Energy

Power Dissipation T_C= 25 °C

Derating Factor above 25°C

E_AS

P_D

0.31

W/℃

℃

Operating Junction and Storage Temperature Range

T_J，T_stg

150，–55 to 150

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD. Page 1 of 7

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