Datasheet > HGD065NE4A

HGD065NE4A

更新时间： 2024-03-03 10:10:27

品牌	Logo	应用领域
华润微 - CRMICRO		/
页数	文件大小	规格书
10页	791K
描述
TO-252(或DPAK)

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HGD065NE4A 数据手册

HGD065NE4A

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Source-Drain Diode Characteristics

Rating

Test

Conditions

Parameter

Symbol

Units

Min. Typ. Max.

Continuous Source Current (Body Diode)

Maximum Pulsed Current (Body Diode)

Diode Forward Voltage

I_S

240

1.2

T_C= 25 °C

I_SM

V_SD

trr

I_S=19A,V_GS=0V

Reverse Recovery Time

41.9

di/dt=100A/us

IF=20A

Reverse Recovery Charge

Qrr

Pulse width tp≤300µs,δ≤2%

Parameter

Max.

Symbol

Units

Junction-to-Case

3.2

R_θ

℃/W

Junction-to-Ambient

R_θ

^a1：Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit

is 100A by source bonding technology. Note that current limitations arising from heating of the device

leads may occur with some lead mounting arrangements.

^a2：L=0.5mH, I_D=21.5A, Start T_J=25℃

^a3：Recommend soldering temperature defined by IPC/JEDEC J-STD 020

WUXI CHINA RESOURCES HUAJING MICROELECTRONICS CO., LTD.

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