HFA60EA120P
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 60 A
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Antiparallel diodes
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• UL approved file E78996
SOT-227
• Compliant to RoHS directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
This SOT-227 modules with HEXFRED® rectifier are in
antiparallel configuration. The antiparallel configuration is
used for simple series rectifier and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
PRODUCT SUMMARY
VR
1200 V
2.2 V
VF (typical)
trr (typical)
IF(DC) at TC
145 ns
30 A at 120 °C
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VR
TEST CONDITIONS
MAX.
1200
30
UNITS
Cathode to anode voltage
V
Continuous forward current
Single pulse forward current
Maximum repetitive forward current
IF
TC = 120 °C
IFSM
IFRM
TJ = 25 °C
350
A
Rated VR, square wave, 20 kHz, TC = 60 °C
TC = 25 °C
130
312
Maximum power dissipation
RMS isolation voltage
PD
W
T
C = 100 °C
125
VISOL
Any terminal to case, t = 1 minute
2500
V
Operating junction and storage
temperature range
TJ, TStg
- 55 to 150
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
VBR
IR = 100 μA
1200
-
-
IF = 30 A
-
-
-
-
-
2.2
2.7
2.1
2.0
2.7
3.0
3.8
-
V
Forward voltage
VFM
IF = 60 A
IF = 60 A, TJ = 150 °C
VR = VR rated
75
10
μA
Reverse leakage current
IRM
TJ = 150 °C, VR = VR rated
mA
Document Number: 94610
Revision: 06-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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