HFA60FA120P
Vishay Semiconductors
HEXFRED®
Ultrafast Soft Recovery Diode, 60 A
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
SOT-227
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
The dual diode series configuration (HFA60FA120P) is used
for output rectification or freewheeling/clamping operation
and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such
as HV power supplies, electronic welders, motor control and
inverters.
PRODUCT SUMMARY
VR
1200 V
2.2 V
VF (typical)
trr (typical)
123 ns
I
F(DC) at TC
30 A at 110 °C
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
VR
TEST CONDITIONS
MAX.
1200
30
UNITS
Cathode to anode voltage
V
Continuous forward current
Single pulse forward current
Maximum repetitive forward current
IF
TC = 110 °C
IFSM
IFRM
TJ = 25 °C
350
110
216
86
A
Rated VR, square wave, 20 kHz, TC = 60 °C
TC = 25 °C
Maximum power dissipation
RMS isolation voltage
PD
W
T
C = 100 °C
VISOL
Any terminal to case, t = 1 minute
2500
V
Operating junction and storage
temperature range
TJ, TStg
- 55 to + 150
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Cathode to anode
breakdown voltage
VBR
IR = 100 μA
1200
-
-
IF = 30 A
-
-
-
-
-
2.2
2.7
3.4
1.0
2.7
3.0
3.8
-
V
Forward voltage
VFM
IF = 60 A
IF = 60 A, TJ = 150 °C
VR = VR rated
75
10
μA
Reverse leakage current
IRM
TJ = 150 °C, VR = VR rated
mA
Document Number: 94609
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
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