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HFA04SD60STR

更新时间： 2024-11-06 13:08:19
品牌 Logo 应用领域
威世 - VISHAY 整流二极管局域网超快软恢复二极管快速软恢复二极管
页数 文件大小 规格书
8页 138K
描述
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 4A, 600V V(RRM), Silicon, TO-252, SMD-220, DPAK-3

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HFA04SD60STR 技术参数

是否无铅：含铅是否Rohs认证：不符合
生命周期：Active零件包装代码：TO-252
包装说明：SMD-220, DPAK-3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
HTS代码：8541.10.00.80风险等级：5.39
Is Samacsys：N其他特性：FREE WHEELING DIODE
应用：ULTRA FAST SOFT RECOVERY外壳连接：CATHODE
配置：SINGLE二极管元件材料：SILICON
二极管类型：RECTIFIER DIODE最大正向电压 (VF)：1.7 V
JEDEC-95代码：TO-252JESD-30 代码：R-PSSO-G2
JESD-609代码：e0最大非重复峰值正向电流：25 A
元件数量：1相数：1
端子数量：2最高工作温度：150 °C
最低工作温度：-55 °C最大输出电流：4 A
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：SMALL OUTLINE峰值回流温度（摄氏度）：NOT SPECIFIED
认证状态：Not Qualified最大重复峰值反向电压：600 V
最大反向恢复时间：0.042 µs子类别：Rectifier Diodes
表面贴装：YES技术：AVALANCHE
端子面层：TIN LEAD端子形式：GULL WING
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
Base Number Matches：1

HFA04SD60STR 数据手册

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VS-HFA04SD60SPbF  
Vishay Semiconductors  
www.vishay.com  
HEXFRED® Ultrafast Soft Recovery Diode, 4 A  
FEATURES  
2, 4  
• Ultrafast recovery time  
• Ultrasoft recovery  
• Very low IRRM  
• Very low Qrr  
• Guaranteed avalanche  
1
N/C  
3
Anode  
• Specified at operating temperature  
• Compliant to RoHS Directive 2002/95/EC  
• Meets MSL level 1, per J-STD-020, LF maximum peak of  
260 °C  
D-PAK (TO-252AA)  
BENEFITS  
• Reduced RFI and EMI  
• Reduced power loss in diode and switching transistor  
• Higher frequency operation  
• Reduced snubbing  
PRODUCT SUMMARY  
Package  
D-PAK (TO-252AA)  
4 A  
IF(AV)  
• Reduced parts count  
VR  
600 V  
VF at IF  
1.8 V  
DESCRIPTION/APPLICATIONS  
These diodes are optimized to reduce losses and EMI/RFI  
in high frequency power conditioning systems. The softness  
of the recovery eliminates the need for a snubber in  
most applications. These devices are ideally suited for  
freewheeling, flyback, power converters, motor drives, and  
other applications where high speed and reduced switching  
losses are design requirements.  
t
rr typ.  
17 ns  
TJ max.  
150 °C  
Diode variation  
Single die  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VRRM  
IF(AV)  
TEST CONDITIONS  
VALUES  
UNITS  
Cathode to anode voltage  
600  
V
Maximum continuous forward current  
Single pulse forward current  
TC = 100 °C  
4
IFSM  
25  
16  
A
Repetitive peak forward current  
Maximum power dissipation  
IFRM  
TC = 116 °C  
TC = 100 °C  
PD  
10  
W
Operating junction and storage temperatures  
TJ, TStg  
- 55 to 150  
°C  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Breakdown voltage,  
blocking voltage  
VBR  
VR  
,
IR = 100 μA  
600  
-
-
IF = 4 A  
IF = 8 A  
-
-
-
-
-
-
-
1.5  
1.8  
1.4  
0.17  
44  
1.8  
2.2  
1.7  
3.0  
300  
8
V
Forward voltage  
See fig. 1  
VF  
IF = 4 A, TJ = 125 °C  
VR = VR rated  
Maximum reverse  
leakage current  
IR  
μA  
TJ = 125 °C, VR = 0.8 x VR rated  
VR = 200 V  
Junction capacitance  
Series inductance  
CT  
LS  
4
pF  
Measured lead to lead 5 mm from package body  
8.0  
-
nH  
Revision: 14-Jun-11  
Document Number: 94034  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  
12345678

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