PD-95733
HFA04TB60PbF
HEXFREDTM
Ultrafast,SoftRecoveryDiode
BASE
CATHODE
Features
VR = 600V
VF = 1.8V
Ultrafast Recovery
Ultrasoft Recovery
Very Low IRRM
4
Very Low Qrr
Specified at Operating Conditions
Lead-Free
Qrr * = 40nC
2
di(rec)M/dt * = 280A/µs
3
1
ANODE
2
CATHODE
* 125°C
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and Switching
Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
Description
International Rectifier's HFA04TB60 is a state of the art ultra fast recovery
diode. Employing the latest in epitaxial construction and advanced processing
techniques it features a superb combination of characteristics which result in
performance which is unsurpassed by any rectifier previously available. With
basic ratings of 600 volts and 8 amps per Leg continuous current, the
HFA04TB60 is especially well suited for use as the companion diode for IGBTs
and MOSFETs. In addition to ultra fast recovery time, the HEXFRED product line
features extremely low values of peak recovery current (IRRM) and does not
TO-220AC
exhibit any tendency to "snap-off" during the t portion of recovery. The
b
HEXFRED features combine to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to significantly reduce
snubbing, component count and heatsink sizes. The HEXFRED HFA04TB60 is
ideally suited for applications in power supplies and power conversion systems
(such as inverters), motor drives, and many other similar applications where
high speed, high efficiency is needed.
Absolute Maximum Ratings
Parameter
Max
600
4.0
25
Units
V
VR
Cathode-to-Anode Voltage
Continuous Forward Current
Single Pulse Forward Current
Maximum Repetitive Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
IF @ TC = 100°C
IFSM
A
IFRM
16
PD @ TC = 25°C
25
W
C
PD @ TC = 100°C
10
TJ
-55 to +150
TSTG
Storage Temperature Range
www.irf.com
1
10/18/04