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HERF1001GS PDF预览

HERF1001GS

更新时间: 2024-09-15 12:57:43
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
6页 933K
描述
10Ampere Insulated Dual Series Connection High Efficiency Rectifiers

HERF1001GS 数据手册

 浏览型号HERF1001GS的Datasheet PDF文件第2页浏览型号HERF1001GS的Datasheet PDF文件第3页浏览型号HERF1001GS的Datasheet PDF文件第4页浏览型号HERF1001GS的Datasheet PDF文件第5页浏览型号HERF1001GS的Datasheet PDF文件第6页 
SFF10L04GD thru SFF10L08GD  
SFF10L04GD/SFF10L05GD/SFF10L06GD/SFF10L08GD  
Pb Free Plating Product  
10.0 Ampere Insulated Dual Doubler Polarity Super Fast Recovery Rectifiers  
ITO-220AB  
Unit : inch (mm)  
Features  
Super fast switching for high efficiency  
.189(4.8)  
.165(4.2)  
.406(10.3)  
.381(9.7)  
.134(3.4)  
.118(3.0)  
Low forward voltage drop  
High current capability  
Low reverse leakage current  
High surge current capability  
.130(3.3)  
.114(2.9)  
Application  
Automotive Inverters and Solar Inverters  
Plating Power Supply,SMPS and UPS  
.114(2.9)  
.098(2.5)  
.071(1.8)  
.055(1.4)  
Car Audio Amplifiers and Sound Device Systems  
.055(1.4)  
.039(1.0)  
.035(0.9)  
.011(0.3)  
.032(.8)  
MAX  
Mechanical Data  
.1  
(2.55)  
.1  
Case: ITO-220AB full plastic isolated package  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202  
method 208  
(2.55)  
Case  
Case  
Case  
Case  
Polarity: As marked on diode body  
Mounting position: Any  
Weight: 1.85 gram approximately  
Doubler  
Tandem Polarity Tandem Polarity  
Suffix "GD" Suffix "GS"  
Series  
Negative  
Common Cathode Common Anode  
Suffix "G" Suffix "GA"  
Positive  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
PARAMETER  
SYMBOL  
UNIT  
SFF10L04GD SFF10L05GD SFF10L06GD SFF10L08GD  
SFF10L04GD SFF10L05GD SFF10L06GD SFF10L08GD  
Marking code on the device  
Repetitive peak reverse voltage  
Reverse voltage, total rms value  
VRRM  
200  
140  
300  
280  
400  
280  
600  
420  
V
V
VR(RMS)  
Per device  
Per diode  
10  
5
Forward current  
IF(AV)  
IFSM  
A
A
Surge peak forward current, 8.3 ms single half  
sine-wave superimposed on rated load per diode  
125  
80  
Junction temperature  
Storage temperature  
TJ  
- 55 to +150  
- 55 to +150  
°C  
°C  
TSTG  
THERMAL PERFORMANCE  
PARAMETER  
Junction-to-lead thermal resistance  
Junction-to-ambient thermal resistance  
Junction-to-case thermal resistance  
SYMBOL  
RӨJL  
LIMIT  
UNIT  
2
9
3
°C/W  
°C/W  
°C/W  
RӨJA  
RӨJC  
Thermal Performance Note: Units mounted on recommended PCB (2"x3"x0.25" Al -plate)  
Page 1/6  
http://www.thinkisemi.com.tw/  
Rev.08T  
© 1995 Thinki Semiconductor Co., Ltd.  

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