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HERF1002G PDF预览

HERF1002G

更新时间: 2024-11-04 22:51:15
品牌 Logo 应用领域
TSC 整流二极管高效整流二极管功效局域网
页数 文件大小 规格书
2页 77K
描述
Isolation 10.0 AMPS. Glass Passivated High Efficient Rectifiers

HERF1002G 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:GREEN, PLASTIC, ITO-220AB, 3 PINReach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.69Is Samacsys:N
其他特性:FREE WHEELING DIODE, HIGH RELIABILITY, UL RECOGNIZED应用:EFFICIENCY
外壳连接:ISOLATED配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):1 VJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3湿度敏感等级:1
最大非重复峰值正向电流:125 A元件数量:2
相数:1端子数量:3
最高工作温度:150 °C最低工作温度:-65 °C
最大输出电流:5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
认证状态:Not Qualified最大重复峰值反向电压:100 V
最大反向恢复时间:0.05 µs子类别:Rectifier Diodes
表面贴装:NO端子面层:Pure Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
Base Number Matches:1

HERF1002G 数据手册

 浏览型号HERF1002G的Datasheet PDF文件第2页 
HERF1001G  
HERF1008G  
THRU  
Isolation 10.0 AMPS. Glass Passivated High Efficient Rectifiers  
Voltage Range  
50 to 1000 Volts  
Current  
10.0 Amperes  
ITO-220AB  
Features  
.185(4.7)  
MAX  
.406(10.3)MAX  
a
a
a
a
Low forward voltage drop  
High current capability  
High reliability  
.124(3.16)  
MAX  
.134(3.4)DIA  
.113(3.0)DIA  
.112(2.85)  
.100(2.55)  
.272(6.9)  
.248(6.3)  
.606(15.5)  
.583(14.8)  
High surge current capability  
Mechanical Data  
a
a
a
a
a
a
Case: ITO-220AB molded plastic  
Epoxy: UL 94V-O rate flame retardant  
Terminals: Leads solderable per MIL-STD-  
Terminals: 202, Method 208 guaranteed  
Polarity: As marked  
High temperature soldering guaranteed:  
250°C/ 0.25” (6.35mm) from case for 10  
seconds.  
.161(4.1)  
MAX  
.110(2.8)  
.098(2.5)  
.055(1.4)  
MAX  
.543(13.8)  
.512(13.2)  
.030(0.76)  
MAX  
.035(0.9)  
MAX  
.100(2.55)  
.100(2.55)  
Mounting torque: 5 in – 1bs. max.  
a
Weight: 2.24 grams  
Dimensions in inches and (millimeters)  
Maximum Ratings and Electrical Characteristics  
Rating at 25°C ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%  
HERF HERF HERF HERF HERF HERF HERF HERF  
1001G 1002G 1003G 1004G 1005G 1006G 1007G 1008G  
Type Number  
Units  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
50 100 200 300 400 600 800 1000  
V
V
V
35  
70 140 210 280 420 560 700  
Maximum DC Blocking Voltage  
50 100 200 300 400 600 800 1000  
Maximum Average Forward Rectified Current  
@TC = 100°C  
Peak Forward Surge Current, 8.3 ms Single  
Half Sine-wave Superimposed on Rated Load  
(JEDEC method )  
10.0  
125  
A
A
Maximum Instantaneous Forward Voltage  
@ 5.0A  
Maximum DC Reverse Current @ TA=25°C  
at Rated DC Blocking Voltage @ TA=125°C  
1.0  
1.3  
10.0  
1.7  
V
uA  
uA  
nS  
pF  
400  
Maximum Reverse Recovery Time ( Note 1 )  
Typical Junction Capacitance ( Note 2 )  
Typical Thermal Resistance RÛJC (Note 3)  
Operating Temperature Range TJ  
50  
80  
80  
50  
5.0  
-65 to +150  
-65 to +150  
/W  
°C  
°C  
°C  
Storage Temperature Range TSTG  
Notes: 1. Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A  
Notes: 2. Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.  
Notes: 3. Thermal Resistance from Junction to Case per Leg Mounted on Heatsink.  
- 194 -  

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