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HER2008PR PDF预览

HER2008PR

更新时间: 2024-09-16 02:49:51
品牌 Logo 应用领域
THINKISEMI /
页数 文件大小 规格书
2页 273K
描述
20.0 Ampere Heatsink Dual Doubler Polarity High Efficiency Rectifiers

HER2008PR 数据手册

 浏览型号HER2008PR的Datasheet PDF文件第2页 
HER2002PR thru HER2012PR  
HER2002PR thru HER2012PR  
Pb Free Plating Product  
20.0 Ampere Heatsink Dual Doubler Polarity High Efficiency Rectifiers  
TO-247AD/TO-3P  
Unit:inch(mm)  
Features  
ThinkiSemi latest&matured process FRD/FRED  
Low forward voltage drop  
High current capability  
.640(16.25)  
.620(15.75)  
.199(5.05)  
.175(4.45)  
.142(3.6)  
.125(3.2)  
Low reverse leakage current  
High surge current capability  
Application  
.095(2.4)  
Automotive Inverters and Solar Inverters  
Car Audio Amplifiers and Sound Device Systems  
Plating Power Supply,Motor Control,UPS and SMPS etc.  
.126(3.2)  
.110(2.8)  
.050(1.25)  
.045(1.15)  
.030(0.75)  
.017(0.45)  
Mechanical Data  
.225(5.7)  
.204(5.2)  
.225(5.7)  
.204(5.2)  
Case: Heatsink TO-247AD/TO-3P Package Outline  
Epoxy: UL 94V-0 rate flame retardant  
Terminals: Solderable per MIL-STD-202 method 208  
Polarity: As marked on diode body  
Mounting position: Any  
Case  
Case  
Case  
Case  
Weight: 6.0 gram approximately  
Doubler  
Series  
Negative  
Positive  
Tandem Polarity  
Suffix "PR"  
Tandem Polarity  
Suffix "PL"  
Common Cathode  
Suffix "PT"  
Common Anode  
Suffix "PA"  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating at 25ambient temperature unless otherwise specified.  
Single phase,half wave,60Hz,resistive or inductive load.  
For capacitive load, derate current by 20%.  
HER2003PR  
HER2004PR  
PARAMETER  
HER2010PR  
HER2012PR  
SYMBOL  
HER2006PR  
HER2008PR  
UNIT  
HER2002PR  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
VRRM  
VRMS  
VDC  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
1200  
840  
V
V
V
Maximum DC Blocking Voltage  
1000  
1200  
Maximum Average Forward Rectified  
Current TC=125℃  
20.0  
200  
IF(AV)  
IFSM  
A
A
V
(Total Device 2x10.0A=20.0A)  
Peak Forward Surge Current, 8.3ms single Half  
sine-wave superimposed on rated load (JEDEC  
method)(Per Diode/Per Leg)  
Maximum Instantaneous Forward Voltage  
@10.0A(Per Diode/Per Leg)  
VF  
(Typical)  
1.30-1.70  
0.85-1.00  
1.00-1.30  
1.30-1.70  
Maximum DC Reverse Current @TJ=25℃  
At Rated DC Blocking Voltage @TJ=125℃  
1.0  
100  
μA  
μA  
IR  
Maximum Reverse Recovery Time (Note1)  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
35-50  
50-75  
Trr  
CJ  
nS  
pF  
100  
0.75  
RθJC  
/W  
Operating Junction and Storage  
Temperature Range  
-55 to +175  
TJ,TSTG  
Note:(1)Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.  
Note:(2)Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.  
Note:(3)Thermal Resistance junction to case.  
Page 1/2  
Rev.11T  
© 1995 Thinki Semiconductor Co., Ltd.  
http://www.thinkisemi.com.tw/  

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