是否Rohs认证: | 符合 | 生命周期: | Contact Manufacturer |
零件包装代码: | POMM | 针数: | 3 |
Reach Compliance Code: | compliant | 风险等级: | 5.8 |
最大集电极电流 (IC): | 1 A | 最小直流电流增益 (hFE): | 200 |
元件数量: | 1 | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 2 W | 子类别: | BIP General Purpose Small Signal |
表面贴装: | YES | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HD2A4A-T2-AY | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89 | |
HD2A4A-T2-AZ | RENESAS |
获取价格 |
on-chip resistor NPN silicon epitaxial transistor For mid-speed switching | |
HD2A4M | NEC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 70V V(BR)CEO, 1-Element, NPN, Silicon | |
HD2A4M-T1 | NEC |
获取价格 |
1000mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, POWER, PLASTIC, SC-62, 3 PIN | |
HD2A4M-T1-AY | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89 | |
HD2A4M-T2 | NEC |
获取价格 |
Small Signal Bipolar Transistor, 1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, POWER, PL | |
HD2A4M-T2-AZ | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89 | |
HD2A-5D | ETC |
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SOT 23 SILICON PLANAR HIGH SPEED SWITCHING DIODES | |
HD2ADA | ZETEX |
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Rectifier Diode, 1 Element, 85V V(RRM), | |
HD2ADB | ZETEX |
获取价格 |
Rectifier Diode, 1 Element, 85V V(RRM), |