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HD2A4M-T1-AY PDF预览

HD2A4M-T1-AY

更新时间: 2024-11-08 09:34:27
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体管
页数 文件大小 规格书
8页 318K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89

HD2A4M-T1-AY 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.79
最大集电极电流 (IC):1 A最小直流电流增益 (hFE):200
元件数量:1极性/信道类型:NPN
最大功率耗散 (Abs):2 W子类别:BIP General Purpose Small Signal
表面贴装:YES晶体管元件材料:SILICON
Base Number Matches:1

HD2A4M-T1-AY 数据手册

 浏览型号HD2A4M-T1-AY的Datasheet PDF文件第2页浏览型号HD2A4M-T1-AY的Datasheet PDF文件第3页浏览型号HD2A4M-T1-AY的Datasheet PDF文件第4页浏览型号HD2A4M-T1-AY的Datasheet PDF文件第5页浏览型号HD2A4M-T1-AY的Datasheet PDF文件第6页浏览型号HD2A4M-T1-AY的Datasheet PDF文件第7页 
To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Electronics Corporation  
Issued by: Renesas Electronics Corporation (http://www.renesas.com)  
Send any inquiries to http://www.renesas.com/inquiry.  

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