是否Rohs认证: | 不符合 | 生命周期: | Not Recommended |
零件包装代码: | SC-62 | 包装说明: | SMALL OUTLINE, R-PSSO-F3 |
针数: | 3 | Reach Compliance Code: | compliant |
ECCN代码: | EAR99 | 风险等级: | 5.55 |
其他特性: | BUILT IN BIAS RESISTOR RATIO IS 2.13 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 1 A | 集电极-发射极最大电压: | 70 V |
配置: | SINGLE WITH BUILT-IN DIODE AND RESISTOR | 最小直流电流增益 (hFE): | 200 |
JESD-30 代码: | R-PSSO-F3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | 225 | 极性/信道类型: | NPN |
最大功率耗散 (Abs): | 2 W | 认证状态: | Not Qualified |
子类别: | BIP General Purpose Small Signal | 表面贴装: | YES |
端子形式: | FLAT | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HD2L3N-AY | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89 | |
HD2L3N-T1-AY | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89 | |
HD2L3N-T1-AZ | RENESAS |
获取价格 |
on-chip resistor NPN silicon epitaxial transistor For mid-speed switching | |
HD2L3N-T2-AY | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89 | |
HD2L3N-T2-AZ | RENESAS |
获取价格 |
PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89 | |
HD2-PA080-A14BS | DDK |
获取价格 |
Board Connector | |
HD2-PB020-B11A | DDK |
获取价格 |
Board Connector | |
HD2S | YANGJIE |
获取价格 |
MBS | |
HD2S030HA1 | ETC |
获取价格 |
Board-to-Cable Connector for High-speed Transmission HD Series Connector | |
HD3.3M25 | NTE |
获取价格 |
HIGH-FREQ ALUMINUM ELECTROLYTIC |