Datasheet > HD2L3N-T1-AY

HD2L3N-T1-AY

更新时间： 2024-11-07 20:47:31

品牌	Logo	应用领域
瑞萨 - RENESAS		晶体管
页数	文件大小	规格书
8页	318K
描述
PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89

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HD2L3N-T1-AY 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.8
最大集电极电流 (IC)：	1 A	最小直流电流增益 (hFE)：	200
元件数量：	1	极性/信道类型：	NPN
最大功率耗散 (Abs)：	2 W	子类别：	BIP General Purpose Small Signal
表面贴装：	YES	晶体管元件材料：	SILICON
Base Number Matches：	1

To our customers,

Old Company Name in Catalogs and Other Documents

On April 1^st, 2010, NEC Electronics Corporation merged with Renesas Technology

Corporation, and Renesas Electronics Corporation took over all the business of both

companies. Therefore, although the old company name remains in this document, it is a valid

Renesas Electronics document. We appreciate your understanding.

Renesas Electronics website: http://www.renesas.com

April 1^st, 2010

Renesas Electronics Corporation

Issued by: Renesas Electronics Corporation (http://www.renesas.com)

Send any inquiries to http://www.renesas.com/inquiry.

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型号	品牌	获取价格	描述	数据表
HD2L3N-T1-AZ	RENESAS	获取价格	on-chip resistor NPN silicon epitaxial transistor For mid-speed switching
HD2L3N-T2-AY	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89
HD2L3N-T2-AZ	RENESAS	获取价格	PRE-BIASED "DIGITAL" TRANSISTOR,60V V(BR)CEO,1A I(C),SOT-89
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