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HD2300 PDF预览

HD2300

更新时间: 2024-11-30 01:24:23
品牌 Logo 应用领域
海德 - HDSEMI /
页数 文件大小 规格书
6页 2649K
描述
SOT-23 Plastic-Encapsu l ate MOSFET

HD2300 数据手册

 浏览型号HD2300的Datasheet PDF文件第2页浏览型号HD2300的Datasheet PDF文件第3页浏览型号HD2300的Datasheet PDF文件第4页浏览型号HD2300的Datasheet PDF文件第5页浏览型号HD2300的Datasheet PDF文件第6页 
HD2300  
SOT-23 Plastic-Encapsulate MOSFET  
N -Channel MOSFET  
roduct Summary  
P
V(BR)DSS  
RDS(on)MAX  
ID  
SOT- 23  
28mΩ@4.5V  
38mΩ@2.5V  
60mΩ@1.8V  
D
20V  
5.1A  
S
Features  
TrenchFET Power MOSFET  
G
Excellent RDS(on) and Low Gate Charge  
Applications  
Extreme fast switches  
Marking:  
S0  
Parameter  
Symbol  
VDS  
VGS  
ID  
Value  
20  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
±12  
V
Continuous Drain Current  
Pulsed Drain Current(1)  
5.1  
A
IDM  
20  
A
Power Dissipation  
Thermal Resistance from Junction to Ambient(2)  
PD  
0.35  
357  
W
RθJA  
TJ  
/W  
Junction Temperature  
150  
Storage Temperature  
TSTG  
-55~ +150  
1
H
igh Diode Semiconductor  

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