是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | DIP | 包装说明: | DIP, DIP20,.3 |
针数: | 20 | Reach Compliance Code: | not_compliant |
HTS代码: | 8542.39.00.01 | 风险等级: | 5.23 |
Is Samacsys: | N | 计数方向: | BIDIRECTIONAL |
系列: | HCT | JESD-30 代码: | R-CDIP-T20 |
JESD-609代码: | e0 | 逻辑集成电路类型: | PARALLEL IN PARALLEL OUT |
最大频率@ Nom-Sup: | 16000000 Hz | 位数: | 8 |
功能数量: | 1 | 端子数量: | 20 |
最高工作温度: | 125 °C | 最低工作温度: | -55 °C |
输出特性: | 3-STATE | 输出极性: | TRUE |
封装主体材料: | CERAMIC, METAL-SEALED COFIRED | 封装代码: | DIP |
封装等效代码: | DIP20,.3 | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
电源: | 5 V | 传播延迟(tpd): | 34 ns |
认证状态: | Not Qualified | 筛选级别: | MIL-PRF-38535 Class V |
座面最大高度: | 5.08 mm | 子类别: | Shift Registers |
最大供电电压 (Vsup): | 5.5 V | 最小供电电压 (Vsup): | 4.5 V |
标称供电电压 (Vsup): | 5 V | 表面贴装: | NO |
技术: | CMOS | 温度等级: | MILITARY |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | THROUGH-HOLE |
端子节距: | 2.54 mm | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 总剂量: | 200k Rad(Si) V |
触发器类型: | POSITIVE EDGE | 宽度: | 7.62 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
HCTS299HMSR | INTERSIL |
获取价格 |
Radiation Hardened 8-Bit Universal Shift Register; Three-State | |
HCTS299K | INTERSIL |
获取价格 |
Radiation Hardened 8-Bit Universal Shift Register; Three-State | |
HCTS299KMSR | INTERSIL |
获取价格 |
Radiation Hardened 8-Bit Universal Shift Register; Three-State | |
HCTS299MS | INTERSIL |
获取价格 |
Radiation Hardened 8-Bit Universal Shift Register; Three-State | |
HCTS299MS_02 | INTERSIL |
获取价格 |
Radiation Hardened 8-Bit Universal Shift Register; Three-State | |
HCTS30D | INTERSIL |
获取价格 |
Radiation Hardened 8-Input NAND Gate | |
HCTS30DMSH | RENESAS |
获取价格 |
NAND Gate, HCT Series, 1-Func, 8-Input, CMOS, CDIP14 | |
HCTS30DMSR | INTERSIL |
获取价格 |
Radiation Hardened 8-Input NAND Gate | |
HCTS30HMSR | INTERSIL |
获取价格 |
Radiation Hardened 8-Input NAND Gate | |
HCTS30K | INTERSIL |
获取价格 |
Radiation Hardened 8-Input NAND Gate |