Datasheet > GW35HF60WDC

GW35HF60WDC

更新时间： 2024-10-30 10:37:55

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		双极性晶体管
页数	文件大小	规格书
12页	452K
描述
35 A, 600 V ultra fast IGBT

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GW35HF60WDC 数据手册

STGW35HF60WD

35 A, 600 V ultra fast IGBT

Features

■ Improved E at elevated temperature

off

■ Minimal tail current

■ Low conduction losses

■ V

classified for easy parallel connection

CE(sat)

■ Ultra fast soft recovery antiparallel diode

Applications

TO-247

■ Welding

■ High frequency converters

■ Power factor correction

Description

Figure 1.

Internal schematic diagram

The STGW35HF60WD is based on a new

advanced planar technology concept to yield an

IGBT with more stable switching performance

(E ) versus temperature, as well as lower

off

conduction losses. The device is tailored to high

switching frequency operation (over 100 kHz).

Table 1.

Device summary

Order code

Marking⁽¹⁾

Package

Packaging

GW35HF60WDA

GW35HF60WDB

GW35HF60WDC

STGW35HF60WD

TO-247

Tube

1. Collector-emitter saturation voltage is classified in group A, B and C, see Table 5: VCE(sat) classification.

STMicroelectronics reserves the right to ship from any group according to production availability.

May 2010

Doc ID 15592 Rev 5

1/12

www.st.com

12 3 4 5 6 7...12

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