Datasheet > GVT71256G18T-5

GVT71256G18T-5

更新时间： 2024-11-21 19:53:03

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		时钟静态存储器内存集成电路
页数	文件大小	规格书
16页	509K
描述
Standard SRAM, 256KX18, 4ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100

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GVT71256G18T-5 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	QFP	包装说明：	14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
针数：	100	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
风险等级：	5.88	最长访问时间：	4 ns
其他特性：	PIPELINE ARCHITECTURE	最大时钟频率 (fCLK)：	133 MHz
I/O 类型：	COMMON	JESD-30 代码：	R-PQFP-G100
长度：	20 mm	内存密度：	4718592 bit
内存集成电路类型：	STANDARD SRAM	内存宽度：	18
功能数量：	1	端子数量：	100
字数：	262144 words	字数代码：	256000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	256KX18
输出特性：	3-STATE	封装主体材料：	PLASTIC/EPOXY
封装代码：	LQFP	封装等效代码：	QFP100,.63X.87
封装形状：	RECTANGULAR	封装形式：	FLATPACK, LOW PROFILE
并行/串行：	PARALLEL	电源：	2.5/3.3,3.3 V
认证状态：	Not Qualified	座面最大高度：	1.6 mm
最大待机电流：	0.01 A	最小待机电流：	3.14 V
子类别：	SRAMs	最大压摆率：	0.375 mA
最大供电电压 (Vsup)：	3.6 V	最小供电电压 (Vsup)：	3.135 V
标称供电电压 (Vsup)：	3.3 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	GULL WING	端子节距：	0.65 mm
端子位置：	QUAD	宽度：	14 mm
Base Number Matches：	1

GVT71256G18T-5 数据手册

327A

CY7C1327A/GVT71256G18

256K x 18 Synchronous Pipelined Burst SRAM

eral circuitry and a 2-bit counter for internal burst operation. All

synchronous inputs are gated by registers controlled by a pos-

Features

• Fast access times: 3.5, 3.8, and 4.0 ns

itive-edge-triggered Clock Input (CLK). The synchronous in-

puts include all addresses, all data inputs, address-pipelining

Chip Enable (CE), depth-expansion Chip Enables (CE2 and

CE2), Burst Control inputs (ADSC, ADSP, and ADV), Write

Enables (WEL, WEH, and BWE), and Global Write (GW).

• Fast clock speed: 166, 150, 133, and 117 MHz

• Provide high-performance 3-1-1-1 access rate

• Fast OE access times: 3.5 ns and 3.8 ns

• Optimal for depth expansion (one cycle chip deselect

to eliminate bus contention)

• 3.3V –5% and +10% power supply

• 2.5V or 3.3V I/O supply

• 5V tolerant inputs except I/Os

• Clamp diodes to V_SSQat all inputs and outputs

• Common data inputs and data outputs

• Byte Write Enable and Global Write control

• Three chip enables for depth expansion and address

pipeline

• Address, data and control registers

• Internally self-timed Write Cycle

• Burst control pins (interleaved or linear burst se-

quence)

Asynchronous inputs include the Output Enable (OE) and

Burst Mode Control (MODE). The data outputs (Q), enabled

by OE, are also asynchronous.

Addresses and chip enables are registered with either Ad-

dress Status Processor (ADSP) or Address Status Controller

(ADSC) input pins. Subsequent burst addresses can be inter-

nally generated as controlled by the Burst Advance pin (ADV).

Address, data inputs, and write controls are registered on-chip

to initiate a self-timed Write cycle. Write cycles can be one to

four bytes wide as controlled by the write control inputs. Indi-

vidual byte write allows individual byte to be written. WEL con-

trols DQ1–DQ8 and DQP1. WEH controls DQ9–DQ16 and

DQP2. WEL and WEH can be active only with BWE being

LOW. GW being LOW causes all bytes to be written. Write

pass-through capability allows written data available at the

output for the immediately next Read cycle. This device also

incorporates pipelined enable circuit for easy depth expansion

without penalizing system performance.

• Automatic power-down for portable applications

• Low profile 119-lead, 14-mm x 22-mm BGA (Ball Grid

Array) and 100-pin TQFP packages

The CY7C1327A/GVT71256G18 operates from a +3.3V pow-

er supply and all outputs operate on a +2.5V supply. All inputs

and outputs are JEDEC standard JESD8-5 compatible. The

device is ideally suited for 486, Pentium®, 680x0, and Power-

PC™ systems and for systems that benefit from a wide syn-

chronous data bus.

Functional Description

The Cypress Synchronous Burst SRAM family employs high-

speed, low-power CMOS designs using advanced triple-layer

polysilicon, double-layer metal technology. Each memory cell

consists of four transistors and two high-valued resistors.

The

CY7C1327A/GVT71256G18

SRAM

integrates

262,144x18 SRAM cells with advanced synchronous periph-

Selection Guide

7C1327A-166

71256G18-3

7C1327A-150

71256G18-4

7C1327A-133

71256G18-5

7C1327A-117

71256G18-6

Maximum Access Time (ns)

3.5

425

3.8

400

4.0

375

4.0

350

Maximum Operating Current (mA)

Maximum CMOS Standby Current (mA)

Pentium is a registered trademark of Intel Corporation.

PowerPC is a trademark of IBM Corporation.

Cypress Semiconductor Corporation

Document #: 38-05129 Rev. **

•

3901 North First Street

•

San Jose

•

CA 95134

•

408-943-2600

Revised September 12, 2001

12 3 4 5 6 7...16

中文翻译

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与GVT71256G18T-5相关器件

型号	品牌	获取价格	描述	数据表
GVT71256T18	CYPRESS	获取价格	256K x 18 Synchronous-Pipelined Cache Tag RAM
GVT71256T18T-10	CYPRESS	获取价格	256K x 18 Synchronous-Pipelined Cache Tag RAM
GVT71256T18T-6	CYPRESS	获取价格	256K x 18 Synchronous-Pipelined Cache Tag RAM
GVT71256T18T-67	CYPRESS	获取价格	256K x 18 Synchronous-Pipelined Cache Tag RAM
GVT71256T18T-7.5	CYPRESS	获取价格	Cache Tag SRAM, 256KX18, 4ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
GVT71256T18T-75	CYPRESS	获取价格	256K x 18 Synchronous-Pipelined Cache Tag RAM
GVT71256ZB36-7.5	CYPRESS	获取价格	ZBT SRAM, 256KX36, 7.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
GVT71256ZB36-7.5I	CYPRESS	获取价格	ZBT SRAM, 256KX36, 7.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
GVT71256ZB36B-7.5I	CYPRESS	获取价格	ZBT SRAM, 256KX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, FBGA-119
GVT71256ZB36B-7I	CYPRESS	获取价格	ZBT SRAM, 256KX36, 7ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, FBGA-119

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