Datasheet > GVT71128E36B-8

GVT71128E36B-8

更新时间： 2024-10-29 20:28:31

品牌	Logo	应用领域
赛普拉斯 - CYPRESS		时钟静态存储器内存集成电路
页数	文件大小	规格书
16页	510K
描述
Standard SRAM, 128KX36, 8ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, FBGA-119

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技术参数
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GVT71128E36B-8 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	BGA	包装说明：	14 X 22 MM, 2.40 MM HEIGHT, FBGA-119
针数：	119	Reach Compliance Code：	not_compliant
ECCN代码：	3A991.B.2.A	HTS代码：	8542.32.00.41
风险等级：	5.89	Is Samacsys：	N
最长访问时间：	8 ns	其他特性：	FLOW-THROUGH ARCHITECTURE
最大时钟频率 (fCLK)：	100 MHz	I/O 类型：	COMMON
JESD-30 代码：	R-PBGA-B119	长度：	22 mm
内存密度：	4718592 bit	内存集成电路类型：	STANDARD SRAM
内存宽度：	36	功能数量：	1
端子数量：	119	字数：	131072 words
字数代码：	128000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	128KX36	输出特性：	3-STATE
封装主体材料：	PLASTIC/EPOXY	封装代码：	BGA
封装等效代码：	BGA119,7X17,50	封装形状：	RECTANGULAR
封装形式：	GRID ARRAY	并行/串行：	PARALLEL
电源：	2.5/3.3,3.3 V	认证状态：	Not Qualified
座面最大高度：	2.4 mm	最大待机电流：	0.01 A
最小待机电流：	3.14 V	子类别：	SRAMs
最大压摆率：	0.32 mA	最大供电电压 (Vsup)：	3.63 V
最小供电电压 (Vsup)：	3.135 V	标称供电电压 (Vsup)：	3.3 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子形式：	BALL
端子节距：	1.27 mm	端子位置：	BOTTOM
宽度：	14 mm	Base Number Matches：	1

GVT71128E36B-8 数据手册

345A

CY7C1345A/GVT71128E36

128K x 36 Synchronous Flow-Through Burst SRAM

eral circuitry and a 2-bit counter for internal burst operation. All

synchronous inputs are gated by registers controlled by a pos-

Features

• Fast access times: 7.5 and 8 ns

itive-edge-triggered Clock Input (CLK). The synchronous in-

puts include all addresses, all data inputs, address-pipelining

Chip Enable (CE), depth-expansion Chip Enables (CE2 and

CE2), Burst Control inputs (ADSC, ADSP, and ADV), Write

Enables (WEL, WEH, and BWE), and Global Write (GW).

• Fast clock speed: 117 and 100 MHz

• Provide high-performance 2-1-1-1 access rate

• Fast OE access times: 4.0 ns

• 3.3V –5% and +10% power supply

• 2.5V or 3.3V I/O supply

Asynchronous inputs include the Output Enable (OE) and

Burst Mode Control (MODE), and Sleep Mode Control (ZZ).

The data outputs (DQ), enabled by OE, are also asynchro-

nous.

• 5V tolerant inputs except I/Os

• Clamp diodes to V_SSQat all inputs and outputs

• Common data inputs and data outputs

• Byte Write Enable and Global Write control

• Three chip enables for depth expansion and address

pipeline

Addresses and chip enables are registered with either Ad-

dress Status Processor (ADSP) or Address Status Controller

(ADSC) input pins. Subsequent burst addresses can be inter-

nally generated as controlled by the Burst Advance pin (ADV).

• Address, data, and control registers

• Internally self-timed Write Cycle

• Burst control pins (interleaved or linear burst se-

quence)

• Automatic power-down for portable applications

• Low profile 119-lead, 14-mm x 22-mm BGA (Ball Grid

Array) and 100-pin TQFP packages

Address, data inputs, and write controls are registered on-chip

to initiate a self-timed Write cycle. Write cycles can be one to

four bytes wide as controlled by the write control inputs. Indi-

vidual byte write allows individual byte to be written. BW1 con-

trols DQ1–DQ8 and DQP1. BW2 controls DQ9–DQ16 and

DQP2. BW3 controls DQ17–DQ24 and DQP3. BW4 controls

DQ25–DQ32 and DQP4. BW1, BW2, BW3, and BW4 can be

active only with BWE being LOW. GW being LOW causes all

bytes to be written.

Functional Description

The CY7C1345A/GVT71128E36 operates from a +3.3V pow-

er supply and all outputs operate on a +2.5V supply. All inputs

and outputs are JEDEC standard JESD8-5 compatible. The

device is ideally suited for 486, Pentium®, 680x0, and Power-

PC™ systems and for systems that benefit from a wide syn-

chronous data bus.

The Cypress Synchronous Burst SRAM family employs high-

speed, low-power CMOS designs using advanced triple-layer

polysilicon, double-layer metal technology. Each memory cell

consists of four transistors and two high-valued resistors.

The

CY7C1345A/GVT71128E36

SRAM

integrates

131,072x36 SRAM cells with advanced synchronous periph-

Selection Guide

7C1345A-117

71128E36-7

7C1345A-100

71128E36-8

7C1345A-100

71128E36-9

7C1345A-100

71128E36-10

Maximum Access Time (ns)

7.5

370

Maximum Operating Current (mA)

Maximum CMOS Standby Current (mA)

320

Pentium is a registered trademark of Intel Corporation.

PowerPC is a trademark of IBM Corporation.

Cypress Semiconductor Corporation

Document #: 38-05123 Rev. **

•

3901 North First Street

•

San Jose

•

CA 95134

•

408-943-2600

Revised September 12, 2001

12 3 4 5 6 7...16

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与GVT71128E36B-8相关器件

型号	品牌	获取价格	描述	数据表
GVT71128E36B-9	ETC	获取价格	x36 Fast Synchronous SRAM
GVT71128E36T-10	ETC	获取价格	x36 Fast Synchronous SRAM
GVT71128E36T-7	CYPRESS	获取价格	Standard SRAM, 128KX36, 7.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-10
GVT71128E36T-8	CYPRESS	获取价格	Standard SRAM, 128KX36, 8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
GVT71128E36T-9	CYPRESS	获取价格	Standard SRAM, 128KX36, 8.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-10
GVT71128F36T-3	CYPRESS	获取价格	Cache SRAM, 128KX36, 3.5ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
GVT71128F36T-4	CYPRESS	获取价格	Cache SRAM, 128KX36, 3.8ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
GVT71128F36T-6	CYPRESS	获取价格	Cache SRAM, 128KX36, 4ns, CMOS, PQFP100, 14 X 20 MM, 1.40 MM HEIGHT, PLASTIC, TQFP-100
GVT71128G36B-3	CYPRESS	获取价格	Standard SRAM, 128KX36, 3.5ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119
GVT71128G36B-5	CYPRESS	获取价格	Standard SRAM, 128KX36, 4ns, CMOS, PBGA119, 14 X 22 MM, 2.40 MM HEIGHT, PLASTIC, BGA-119

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