Datasheet > GTRA262802FC

GTRA262802FC

更新时间： 2024-11-26 02:51:55

品牌	Logo	应用领域
科锐 - CREE		/
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描述
Thermally-Enhanced High Power RF GaN on SiC HEMT 250 W, 48 V, 2490 â 2690 MHz

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GTRA262802FC

Thermally-Enhanced High Power RF GaN on SiC HEMT

250 W, 48 V, 2490 – 2690 MHz

Description

GTRA262802FC

The GTRA262802FC is a 250-watt (P

) GaN on SiC high electron

3dB

Package H-37248C-4

mobility transistor (HEMT) for use in multi-standard cellular power

amplifier applications. It features input matching, high efficiency, and

a thermally-enhanced package with earless flange.

Features

Single-carrier WCDMA Drive-up

V_DD= 48 V, I_DQ(MAIN)= 100 mA,

V_GS(PEAK)= –5.0 V, ƒ = 2635 MHz,

3GPP WCDMA signal, PAR = 10 dB,

3.84 MHz BW

•ꢀ GaN on SiC HEMT technology

•ꢀ Input matched

•ꢀ Typical pulsed CW performance, 2605 MHz, 48 V,

combined outputs, 16 µs pulse width

- Output power at P

- Efﬁciency = 62%

- Gain = 14.4 dB

= 250 W

3dB

Efficiency

•ꢀ Capable of handling 10:1 VSWR @48 V, 38 W

(CW) output power

Gain

•ꢀ Human Body Model Class 1A (per ANSI/ESDA/

JEDEC JS-001)

-10

-30

-50

-70

•ꢀ Low thermal resistance

•ꢀ Pb-free and RoHS compliant

PAR @ 0.01% CCDF

gtra262802fc_g1

Average Output Power (dBm)

RF Characteristics

Single-carrier WCDMA Specifications (tested in Wolfspeed Doherty production test fixture)

= 48 V, I = 100 mA, V = V = 200 mA – 2.05 V, P = 38 W avg, ƒ = 2635 MHz, 3GPP signal, 3.84 MHz

GS(peak)

GS @ DQ

OUT

channel bandwidth, 10 dB peak/average @ 0.01% CCDF

Characteristic

Gain

Symbol

Min

13.5

Typ

Max

—

Unit

Drain Efﬁciency

h_D

—

Adjancent Channel Power Ratio

ACPR

—

–28

–24.5

dBc

All published data at T

= 25°C unless otherwise indicated

CASE

ESD: Electrostatic discharge sensitive device—observe handling precautions!

Rev. 03, 2018-07-24

4600 Silicon Drive

Durham, NC 27703

www.wolfspeed.com

12 3 4 5 6 7...9

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与GTRA262802FC相关器件

型号	品牌	获取价格	描述	数据表
GTRA262802FC-V2-R0	CREE	获取价格	Thermally-Enhanced High Power RF GaN on SiC H
GTRA262802FC-V2-R2	CREE	获取价格	Thermally-Enhanced High Power RF GaN on SiC H
GTRA263902FC-V2	MACOM	获取价格	High Power RF GaN-on-SiC HEMT 370 W; 48 V; 2495 - 2690 MHz
GTRA362002FC	CREE	获取价格	Thermally-Enhanced High Power RF GaN on SiC H
GTRA362002FC-V1	MACOM	获取价格	High Power RF GaN-on-SiC HEMT 200 W; 48 V; 3400 - 3600 MHz
GTRA362802FC	CREE	获取价格	Thermally-Enhanced High Power RF GaN on SiC H
GTRA362802FC-V1	MACOM	获取价格	High Power RF GaN-on-SiC HEMT 280 W, 48 V, 3400 - 3600 MHz
GTRA364002FC	CREE	获取价格	Thermally-Enhanced High Power RF GaN on SiC H
GTRA364002FC	MACOM	获取价格	High Power RF GaN-on-SiC HEMT 400 W; 48 V; 3400 - 3600 MHz
GTRA374902FC	CREE	获取价格	Thermally-Enhanced High Power RF GaN on SiC H