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GT25G101SM_06 PDF预览

GT25G101SM_06

更新时间： 2024-11-04 04:19:55
品牌 Logo 应用领域
东芝 - TOSHIBA 闪光灯双极性晶体管
页数 文件大小 规格书
4页 293K
描述
SILICON N−CHANNEL IGBT STROBE FLASH APPLICATIONS

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中文翻译

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GT25G101SM_06 数据手册

 浏览型号GT25G101SM_06的Datasheet PDF文件第2页浏览型号GT25G101SM_06的Datasheet PDF文件第3页浏览型号GT25G101SM_06的Datasheet PDF文件第4页 
GT25G101(SM)  
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N−CHANNEL IGBT  
GT25G101(SM)  
Unit: mm  
STROBE FLASH APPLICATIONS  
z High Input Impedance  
z Low Saturation Voltage : V  
z Enhancement−Mode  
z 12V Gate Drive  
= 8V (Max.) (I = 170A)  
CE (sat)  
C
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)  
CHARACTERISTIC  
SYMBOL  
RATING  
UNIT  
Collector−Emitter Voltage  
Gate−Emitter Voltage  
V
V
400  
±25  
V
V
CES  
GES  
DC  
I
25  
C
Collector Current  
A
1ms  
I
170  
CP  
Ta = 25°C  
Tc = 25°C  
P
1.3  
C
C
Collector Power  
Dissipation  
JEDEC  
―
―
W
P
75  
JEITA  
TOSHIBA  
Weight: 1.4g  
2−10S2C  
Junction Temperature  
T
150  
°C  
°C  
j
Storage Temperature Range  
T
stg  
−55~150  
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the  
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even  
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum  
ratings.  
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook  
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report  
and estimated failure rate, etc).  
ELECTRICAL CHARACTERISTICS (Ta = 25°C)  
CHARACTERISTIC  
Gate Leakage Current  
SYMBOL  
TEST CONDITION  
MIN  
TYP.  
MAX  
UNIT  
I
V
V
= ±25V, V = 0  
―
―
4
―
―
±100  
10  
7
nA  
μA  
V
GES  
GE  
CE  
CE  
Collector Cut−off Current  
Gate−Emitter Cut−off Voltage  
Collector−Emitter Saturation Voltage  
Input Capacitance  
I
= 400V, V  
= 0  
CES  
GE  
V
I
I
= 1mA, V = 5V  
CE  
5
GE (OFF)  
C
C
V
= 170A, V  
= 20V (Pulsed)  
GE  
―
―
―
―
―
―
―
5
8
V
CE (sat)  
C
V
= 10V, V = 0, f = 1MHz  
GE  
2000  
0.1  
0.15  
4.0  
4.5  
―
―
pF  
ies  
CE  
Rise Time  
t
0.5  
0.5  
6.0  
7.0  
r
Turn−on Time  
Switching Time  
t
t
on  
μs  
Fall Time  
t
f
Turn−off Time  
off  
Thermal Resistance  
R
th (j−c)  
―
1.66 °C / W  
1
2006-11-02  
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 		Metal holddowns to solder by reflow are used instead of screws for PCB mounting.

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