Datasheet > GSD2004C-HE3-18

GSD2004C-HE3-18

更新时间： 2024-01-30 16:31:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	96K
描述
Dual Common Cathode Small Signal High Voltage Switching Diode

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数据手册

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GSD2004C-HE3-18 数据手册

GSD2004C

Vishay Semiconductors

www.vishay.com

Dual Common Cathode Small Signal High Voltage Switching Diode

FEATURES

• Silicon epitaxial planar diode

• Fast switching dual common cathode diode,

especially suited for applications requiring high

voltage capability

• AEC-Q101 qualified available

• Base P/N-E3 - RoHS-compliant, commercial

grade

18108_1

• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified

• Material categorization: for definitions of compliance

please see www.vishay.com/doc?99912

DESIGN SUPPORT TOOLS click logo to get started

Models

Available

MECHANICAL DATA

Case: SOT-23

Weight: approx. 8.8 mg

Packaging codes / options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

PARTS TABLE

PART

ORDERING CODE

CIRCUIT CONFIGURATION

TYPE MARKING

REMARKS

GSD2004C-E3-08 or GSD2004C-E3-18

GSD2004C-HE3-08 or GSD2004C-HE3-18

GSD2004C

Common cathode

DBC

Tape and reel

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

240

300

225

625

UNIT

Continuous reverse voltage

Peak repetitive reverse voltage

Forward current (continuous)

Peak repetitive forward current

V_R

V_RRM

I_F

I_FRM

t_p= 1 μs

t_p= 1 s

Non-repetitive peak forward current

Power dissipation ⁽¹⁾

I_FSM

P_tot

350

THERMAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Typical thermal resistance junction to

ambient air ⁽¹⁾

R_thJA

357

°C/W

Junction temperature

T_j

150

°C

Storage temperature range

Operating temperature range

T_stg

T_op

-65 to +150

-55 to +150

Note

(1)

Device on fiberglass substrate

Rev. 1.2, 13-Feb-18

Document Number: 85424

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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与GSD2004C-HE3-18相关器件

型号	品牌	获取价格	描述	数据表
GSD2004S	VISHAY	获取价格	Dual In-Series Small-Signal High-Voltage Switching Diode
GSD2004S_18	VISHAY	获取价格	Dual In-Series Small Signal High Voltage Switching Diode
GSD2004S-E3-08	VISHAY	获取价格	Rectifier Diode, 2 Element, 0.225A, 300V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3
GSD2004S-E3-18	VISHAY	获取价格	Rectifier Diode, 2 Element, 0.225A, 300V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3
GSD2004S-G	VISHAY	获取价格	Silicon epitaxial planar diode
GSD2004S-GS08	VISHAY	获取价格	Rectifier Diode, 300V V(RRM),
GSD2004S-GS18	VISHAY	获取价格	Rectifier Diode, 300V V(RRM),
GSD2004S-HE3-08	VISHAY	获取价格	Rectifier Diode, 2 Element, 0.225A, 300V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3
GSD2004S-HE3-18	VISHAY	获取价格	Rectifier Diode, 2 Element, 0.225A, 300V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-3
GSD2004S-V	BOURNS	获取价格	P500-G and P850-G Series Dual TBUÂ® High-Spee

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