Datasheet > GSD2004S-G

GSD2004S-G

更新时间： 2024-01-11 01:03:14

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
4页	85K
描述
Silicon epitaxial planar diode

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GSD2004S-G 数据手册

GSD2004S-G

Vishay Semiconductors

www.vishay.com

Dual In-Series Small Signal High Voltage Switching Diode

FEATURES

• Silicon epitaxial planar diode

• Fast switching dual in-series diode, especially

suited for applications requiring high voltage

capability

• AEC-Q101 qualified

• Base P/N-G3 - green, commercial grade

• Material categorization: 

For definitions of compliance please see

www.vishay.com/doc?99912 



MECHANICAL DATA

Case: SOT-23

Weight: approx. 8.1 mg

Packaging codes/options:

18/10K per 13” reel (8 mm tape), 10K/box

08/3K per 7” reel (8 mm tape), 15K/box

PARTS TABLE

PART

ORDERING CODE

INTERNAL CONSTRUCTION

Dual diodes serial

TYPE MARKING

REMARKS

GSD2004S-G

GSD2004S-G3-08 or GSD2004S-G3-18

DB7

Tape and reel

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

240

300

225

625

4.0

UNIT

Continuous reverse voltage

Peak repetitive reverse voltage

Forward current (continuous)

Peak repetitive forward current

V_R

V_RRM

I_F

I_FRM

I_FSM

P_tot

t_p= 1 μs

t_p= 1 s

Non-repetitive peak forward current

Power dissipation ⁽¹⁾

1.0

350

THERMAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Typical thermal resistance junction to

ambient air ⁽¹⁾

R_thJA

357

°C/W

Junction temperature

T_j

150

°C

Storage temperature range

Operating temperature range

T_stg

T_op

- 65 to + 150

- 55 to + 150

Note

(1)

Device on fiberglass substrate

Rev. 1.0, 16-May-13

Document Number: 85423

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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