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GSD2004W-HE3-08 PDF预览

GSD2004W-HE3-08

更新时间: 2024-10-02 14:50:39
品牌 Logo 应用领域
威世 - VISHAY 高压快速恢复二极管测试光电二极管
页数 文件大小 规格书
3页 80K
描述
Rectifier Diode, 1 Element, 0.225A, 300V V(RRM), Silicon, ROHS COMPLIANT PACKAGE-2

GSD2004W-HE3-08 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PDSO-G2
针数:2Reach Compliance Code:compliant
ECCN代码:EAR99HTS代码:8541.10.00.70
Factory Lead Time:10 weeks风险等级:5.59
应用:HIGH VOLTAGE FAST RECOVERY最小击穿电压:300 V
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1 V
JESD-30 代码:R-PDSO-G2JESD-609代码:e3
湿度敏感等级:1最大非重复峰值正向电流:4 A
元件数量:1相数:1
端子数量:2最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.225 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE最大功率耗散:0.35 W
参考标准:AEC-Q101最大重复峰值反向电压:300 V
最大反向电流:0.1 µA最大反向恢复时间:0.05 µs
反向测试电压:240 V表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUALBase Number Matches:1

GSD2004W-HE3-08 数据手册

 浏览型号GSD2004W-HE3-08的Datasheet PDF文件第2页浏览型号GSD2004W-HE3-08的Datasheet PDF文件第3页 
GSD2004W  
Vishay Semiconductors  
www.vishay.com  
Small Signal Switching Diode, High Voltage  
FEATURES  
• Silicon epitaxial planar diode  
• Fast switching diode, especially suited for  
applications requiring high voltage capability  
• AEC-Q101 qualified  
• Base P/N-E3 - RoHS-compliant, commercial  
grade  
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
MECHANICAL DATA  
Case: SOD-123  
Weight: approx. 10.3 mg  
Packaging codes/options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
PARTS TABLE  
PART  
ORDERING CODE  
INTERNAL CONSTRUCTION TYPE MARKING  
REMARKS  
GSD2004W-E3-08 or GSD2004W-E3-18  
GSD2004W-HE3-08 or GSD2004W-HE3-18  
GSD2004W  
Single diode  
B6  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
240  
300  
225  
625  
4
UNIT  
V
Continuous reverse voltage  
Repetitive peak reverse voltage  
Forward current (continuous)  
Repetitive peak forward current  
VR  
VRRM  
IF  
V
mA  
mA  
A
IFRM  
IFSM  
IFSM  
Ptot  
tp = 1 μs  
tp = 1 s  
Non-repetitive peak forward current  
Power dissipation (1)  
1
A
350  
mW  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
Typical thermal resistance junction to ambient air (1)  
TEST CONDITION  
SYMBOL  
RthJA  
Tj  
VALUE  
357  
UNIT  
K/W  
°C  
Junction temperature  
150  
Storage temperature range  
Operating temperature range  
Tstg  
- 65 to + 150  
- 55 to + 150  
°C  
Top  
°C  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature.  
Rev. 1.7, 13-May-13  
Document Number: 85729  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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