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GSD2004WS-G3-18 PDF预览

GSD2004WS-G3-18

更新时间: 2024-10-02 15:42:15
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
4页 92K
描述
Rectifier Diode, 1 Element, 0.225A, 300V V(RRM), Silicon, GREEN PACKAGE-2

GSD2004WS-G3-18 技术参数

是否Rohs认证:符合生命周期:Active
包装说明:GREEN PACKAGE-2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70Factory Lead Time:10 weeks
风险等级:5.11Is Samacsys:N
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODEJESD-30 代码:R-PDSO-G2
元件数量:1端子数量:2
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:0.225 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED最大功率耗散:0.2 W
参考标准:AEC-Q101最大重复峰值反向电压:300 V
最大反向恢复时间:0.05 µs表面贴装:YES
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

GSD2004WS-G3-18 数据手册

 浏览型号GSD2004WS-G3-18的Datasheet PDF文件第2页浏览型号GSD2004WS-G3-18的Datasheet PDF文件第3页浏览型号GSD2004WS-G3-18的Datasheet PDF文件第4页 
GSD2004WS-G  
Vishay Semiconductors  
www.vishay.com  
Small Signal Switching Diode, High Voltage  
FEATURES  
• Silicon epitaxial planar diode  
• Fast switching diode, especially suited for  
applications requiring high voltage capability  
• AEC-Q101 qualified  
• Base P/N-G3 - green, commercial grade  
• Base P/N-HG3 - green, AEC-Q101 qualified  
(part number available on request)  
DESIGN SUPPORT TOOLS click logo to get started  
• Material categorization:  
for definitions of compliance please see  
www.vishay.com/doc?99912  
Models  
Available  
MECHANICAL DATA  
Case: SOD-323  
Weight: approx. 4 mg  
Packaging codes / options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
PARTS TABLE  
PART  
ORDERING CODE  
CIRCUIT CONFIGURATION TYPE MARKING  
Single B7  
REMARKS  
GSD2004WS-G3-08 or GSD2004WS-G3-18  
GSD2004WS-HG3-08 or GSD2004WS-HG3-18  
GSD2004WS-G  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
240  
300  
225  
625  
4
UNIT  
V
Continuous reverse voltage  
Repetitive peak reverse voltage  
Forward current (continuous)  
Peak repetitive forward current  
VR  
VRRM  
IF  
V
mA  
mA  
A
IFRM  
IFSM  
IFSM  
Ptot  
tp = 1 μs  
tp = 1 s  
Non-repetitive peak forward current  
Power dissipation (1)  
1
A
200  
mW  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Typical thermal resistance junction to  
ambient air (1)  
RthJA  
650  
K/W  
Junction temperature  
Tj  
150  
°C  
°C  
°C  
Storage temperature range  
Operating temperature range  
Tstg  
Top  
-65 to +150  
-55 to +150  
Note  
(1)  
Valid provided that electrodes are kept at ambient temperature  
Rev. 1.3, 14-Jul-17  
Document Number: 85415  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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