Datasheet > GSD2656

GSD2656

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
GTM		晶体晶体管
页数	文件大小	规格书
2页	137K
描述
NPN EPITAXIAL TRANSISTOR

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数据手册

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GSD2656 数据手册

ISSUED DATE :2006/01/18

REVISED DATE :

GTM

CORPORATION

GSD2656

N P N E P I T A X I A L T R A N S I S T O R

Description

The GSD2656 is designed for general purpose amplifier applications.

Package Dimensions

Millimeter

REF.

Min.

Max.

1.10

0.10

1.00

2.20

1.35

2.40

Min.

Max.

0.80

0.42 REF.

0.15

0.25

0.10

0.35

0.40

0.25

0.80

1.80

1.15

1.80

0.65 REF.

0.15 BSC.

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

Ratings

+150

-55~+150

Unit

Tstg

VCBO

VCEO

VEBO

Total Power Dissipation

225

Electrical Characteristics (Ta = 25к, unless otherwise noted)

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

=10uA, I

BVCEO

BVEBO

=1mA, IB

=10uA, I

=500mA, I =25mA

=100mA

=-100mA, f=100MHz

CBO

100

350

500

CB=30V, IE

EBO

EB=6V, IC

CE(sat)

*hFE

*fT

120

CE=2V, I

400

MHz

CE=2V, IE

Cob

CB=10V, f=1MHz

*Pulsed Test

Classification Of hFE

Rank

EUC

EUD

160 ~ 300

EUE

250 ~ 500

Range

120 ~ 200

GSD2656

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