GSD2004WS-G
Vishay Semiconductors
www.vishay.com
Small Signal Switching Diode, High Voltage
FEATURES
• Silicon epitaxial planar diode
• Fast switching diode, especially suited for
applications requiring high voltage capability
• AEC-Q101 qualified
• Base P/N-G3 - green, commercial grade
• Base P/N-HG3 - green, AEC-Q101 qualified
(part number available on request)
MECHANICAL DATA
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Case: SOD-323
Weight: approx. 4 mg
Packaging codes/options:
18/10K per 13" reel (8 mm tape), 10K/box
08/3K per 7" reel (8 mm tape), 15K/box
PARTS TABLE
PART
ORDERING CODE
INTERNAL CONSTRUCTION TYPE MARKING
REMARKS
GSD2004WS-G3-08 or GSD2004WS-G3-18
GSD2004WS-HG3-08 or GSD2004WS-HG3-18
GSD2004WS-G
Single diode
B7
Tape and reel
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
240
300
225
625
4
UNIT
V
Continuous reverse voltage
Repetitive peak reverse voltage
Forward current (continuous)
Peak repetitive forward current
VR
VRRM
IF
V
mA
mA
A
IFRM
IFSM
IFSM
Ptot
tp = 1 μs
tp = 1 s
Non-repetitive peak forward current
Power dissipation (1)
1
A
200
mW
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
Typical thermal resistance junction to
ambient air (1)
RthJA
650
K/W
Junction temperature
Tj
150
°C
°C
°C
Storage temperature range
Operating temperature range
Tstg
Top
-65 to +150
-55 to +150
Note
(1)
Valid provided that electrodes are kept at ambient temperature
Rev. 1.2, 27-Sep-16
Document Number: 85415
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000