Datasheet > GSD2004WS

GSD2004WS

更新时间： 2023-12-06 20:10:43

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森美特 - SUNMATE		/
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描述
Switching Diodes Switch detector

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GSD2004WS 数据手册

GSD2004WS

SURFACE MOUNT FAST SWITCHING DIODE

Features

Silicon Epitaxial Planar Diode

Fast switching diode,especially suited for

applications requiring high voltage capa-

bility

SOD-323

Dim

Min

2.30

1.75

1.15

0.25

0.05

0.70

0.30

Max

2.70

1.95

1.35

0.35

0.15

0.95

—

Mechanical Data

Case: SOD-323, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

Polarity: Cathode Band

Weight: 0.004 grams (approx.)

Marking: A3

All Dimensions in mm

@ T_A= 25°C unless otherwise specified

Maximum Ratings

Parameter

Test condition

Symbol

V_R

Value

240

Unit

Continuous reverse voltage

Peak repetitive reverse voltage

Forward current (continuous)

Peak repetitive forward current

V_RRM

I_F

I_FRM

I_FSM

300

225

625

4.0

Non-repetitive peak forward

current

t_p= 1 µs

t_p= 1 s

I_FSM

P_tot

1.0

200¹⁾

Power dissipation

¹⁾Device on Fiberglass Substrate, see layout on second page

T_amb= 25 °C, unless otherwise specified

Thermal Characteristics

Parameter

Test condition

Symbol

Value

650¹⁾

Unit

Typical thermal resistance

junction to ambient air

R_thJA

°C/W

Junction temperature

T_j

150

°C

Storage temperature range

T_S

- 65 to + 150

¹⁾Device on Fiberglass Substrate, see layout on second page

T_amb= 25 °C, unless otherwise specified

Electrical Characteristics

Parameter

Test condition

I_R= 100 µA

Symbol

V_BR

Min

300

Typ.

0.83

Max

Unit

Reverse breakdown voltage

Leakage current

V_R= 240 V

I_R

100

0.87

1.00

5.0

µA

V_R= 240 V, T_j= 150 °C

I_F= 20 mA

Forward voltage

V_F

C_tot

t_rr

I_F= 100 mA

Diode capacitance

V_F= V_R= 0, f = 1 MHz

Reverse recovery time

I_F= I_R= 30 mA, I_rr= 3.0 mA,

R_L= 100 Ω

¹⁾Device on Fiberglass Substrate, see layout

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