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GSD2004S-V

更新时间： 2024-01-28 09:18:12
品牌 Logo 应用领域
伯恩斯 - BOURNS /
页数 文件大小 规格书
7页 793K
描述
P500-G and P850-G Series Dual TBU® High-Speed Protectors

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中文翻译

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GSD2004S-V 技术参数

是否Rohs认证： 符合生命周期：Obsolete
Reach Compliance Code：unknownECCN代码：EAR99
风险等级：5.84Base Number Matches：1

GSD2004S-V 数据手册

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Bourns® Model P500-G and P850-G Series  
TBU® HSPs are not recommended for POTS  
applications. This series is suited for  
Features  
■ Extremely high speed performance  
■ Blocks high voltages and currents  
■ Two TBU® protectors in one small package  
■ Simple, superior circuit protection  
■ Minimal PCB area  
applications requiring a dual bidirectional device  
where 50 ohms of series resistance is acceptable.  
For new SLIC applications, we recommend that  
customers evaluate our TBU-PL Series.  
■ RoHS compliant*, UL Recognized  
P500-G and P850-G Series Dual TBU® High-Speed Protectors  
®
Transient Blocking Units - TBU Devices  
Agency Approval  
UL recognized component File # E315805.  
®
®
Bourns Model P500-G and P850-G TBU products are dual  
high-speed bidirectional protection components, constructed  
using MOSFET semiconductor technology, designed to protect  
against faults caused by short circuits, AC power cross,  
induction and lightning surges.  
Industry Standards  
Description  
Model  
P500-G  
P850-G  
P850-G  
Port Type 2, 4  
Port Type 3, 5  
K.20, K.20E, K.21, K.21E, K.45  
®
The TBU high speed protector, triggering as a function of  
Telcordia  
ITU-T  
GR-1089  
the MOSFET, blocks surges and provides an effective barrier  
behind which sensitive electronics are not exposed to large  
®
voltages or currents during surge events. The TBU device is  
provided in a surface mount DFN package and meets industry  
standard requirements such as RoHS and Pb Free solder  
reflow profiles.  
Absolute Maximum Ratings (T  
= 25 °C)  
amb  
Symbol  
Parameter  
Maximum protection voltage for impulse faults with rise time ≥ 1 µsec  
Value  
Unit  
P500-Gxxx-WH  
P850-Gxxx-WH  
500  
V
V
V
imp  
850  
P500-Gxxx-WH  
300  
425  
Maximum protection voltage for continuous V  
faults  
V
rms  
rms  
P850-Gxxx-WH  
T
T
Operating temperature range  
Storage temperature range  
-40 to +85  
-65 to +150  
°C  
°C  
op  
stg  
Electrical Characteristics (T  
= 25 °C)  
amb  
Symbol  
Parameter  
Min.  
Typ.  
Max.  
Unit  
P500-G120-WH  
100  
200  
100  
200  
Maximum current through the device that will not cause  
current blocking  
P500-G200-WH  
P850-G120-WH  
P850-G200-WH  
I
I
I
mA  
op  
P500-G120-WH  
P500-G200-WH  
P850-G120-WH  
P850-G200-WH  
P500-G120-WH  
P500-G200-WH  
P850-G120-WH  
P850-G200-WH  
150  
275  
150  
275  
Typical current for the device to go from normal operating  
state to protected state  
mA  
mA  
trigger  
out  
200  
400  
200  
400  
55  
2
Maximum current through the device  
®
Ω
Ω
R
R
Series resistance of the TBU device  
50  
device  
bal  
®
Line-to line series resistance difference between two TBU devices  
Maximum time for the device to go from normal operating  
t
I
1
µs  
mA  
V
block  
state to protected state  
®
Current through the triggered TBU device with 50 Vdc circuit  
0.7  
22  
quiescent  
voltage  
®
Voltage below which the triggered TBU device will transition to  
V
reset  
normal operating state  
®
The P-G series TBU devices are bidirectional; specifications are valid in both directions.  
*RoHS Directive 2002/95/EC Jan. 27, 2003 including annex and RoHS Recast 2011/65/EU June 8, 2011.  
Specifications are subject to change without notice.  
The device characteristics and parameters in this data sheet can and do vary in different applications and actual device performance may vary over time.  
Users should verify actual device performance in their specific applications.  
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