Datasheet > GSD2004W-G3-18

GSD2004W-G3-18

更新时间： 2024-10-03 01:11:43

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
3页	81K
描述
Small Signal Switching Diode, High Voltage

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GSD2004W-G3-18 数据手册

GSD2004W-G

Vishay Semiconductors

www.vishay.com

Small Signal Switching Diode, High Voltage

FEATURES

• Silicon epitaxial planar diode

• Fast switching diode, especially suited for

applications requiring high voltage capability

• AEC-Q101 qualified

• Base P/N-G3 - green, commercial grade

• Material categorization: 

For definitions of compliance please see

www.vishay.com/doc?99912 



MECHANICAL DATA

Case: SOD-123

Weight: approx. 9.4 mg

Packaging codes/options:

18/10K per 13" reel (8 mm tape), 10K/box

08/3K per 7" reel (8 mm tape), 15K/box

PARTS TABLE

PART

ORDERING CODE

GSD2004W-G3-08 or GSD2004W-G3-18

INTERNAL CONSTRUCTION

TYPE MARKING

REMARKS

GSD2004W-G

Single diode

Tape and reel

ABSOLUTE MAXIMUM RATINGS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

VALUE

240

300

225

625

UNIT

Continuous reverse voltage

Repetitive peak reverse voltage

Forward current (continuous)

Repetitive peak forward current

V_R

V_RRM

I_F

I_FRM

I_FSM

P_tot

t_p= 1 μs

t_p= 1 s

Non-repetitive peak forward current

Power dissipation ⁽¹⁾

350

THERMAL CHARACTERISTICS (T_amb= 25 °C, unless otherwise specified)

PARAMETER

Typical thermal resistance junction to ambient air ⁽¹⁾

TEST CONDITION

SYMBOL

R_thJA

T_j

VALUE

357

UNIT

K/W

°C

Junction temperature

150

Storage temperature range

Operating temperature range

T_stg

- 65 to + 150

- 55 to + 150

°C

T_op

°C

Note

(1)

Valid provided that electrodes are kept at ambient temperature.

Rev. 1.0, 13-May-13

Document Number: 85411

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

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