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GSD2004S-V-GS08 PDF预览

GSD2004S-V-GS08

更新时间: 2024-10-02 07:02:11
品牌 Logo 应用领域
威世 - VISHAY 信号二极管开关光电二极管
页数 文件大小 规格书
5页 100K
描述
Dual In-Series Small-Signal High-Voltage Switching Diode

GSD2004S-V-GS08 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT-23
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70风险等级:5.13
Is Samacsys:N配置:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
最大正向电压 (VF):0.87 VJEDEC-95代码:TO-236AB
JESD-30 代码:R-PDSO-G3JESD-609代码:e3
最大非重复峰值正向电流:4 A元件数量:2
端子数量:3最高工作温度:150 °C
最大输出电流:0.225 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260最大功率耗散:0.35 W
认证状态:Not Qualified最大重复峰值反向电压:300 V
最大反向恢复时间:0.05 µs子类别:Rectifier Diodes
表面贴装:YES端子面层:Matte Tin (Sn)
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40Base Number Matches:1

GSD2004S-V-GS08 数据手册

 浏览型号GSD2004S-V-GS08的Datasheet PDF文件第2页浏览型号GSD2004S-V-GS08的Datasheet PDF文件第3页浏览型号GSD2004S-V-GS08的Datasheet PDF文件第4页浏览型号GSD2004S-V-GS08的Datasheet PDF文件第5页 
GSD2004S-V  
Vishay Semiconductors  
Dual In-Series Small-Signal High-Voltage Switching Diode  
Features  
• Silicon Epitaxial Planar Diode  
2
3
• Fast switching dual in-series diode, espe-  
cially suited for applications requiring  
high voltage capability  
1
e3  
1
2
• Lead (Pb)-free component  
18545  
3
• Component in accordance to RoHS 2002/95/EC  
and WEEE 2002/96/EC  
Mechanical Data  
Case: SOT-23 (TO-236AB) Plastic case  
Weight: approx. 8.8 mg  
Packaging Codes/Options:  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box  
Parts Table  
Part  
Ordering code  
Marking  
Remarks  
GSD2004S-V  
GSD2004S-V-GS18 or GSD2004S-V-GS08  
DB6  
Tape and Reel  
Absolute Maximum Ratings  
Tamb = 25 °C, unless otherwise specified  
Parameter  
Test condition  
Symbol  
VR  
Value  
240  
Unit  
Continuous reverse voltage  
V
V
Peak repetitive reverse voltage  
Forward current (continuous)  
Peak repetitive forward current  
VRRM  
IF  
IFRM  
IFSM  
300  
225  
625  
4.0  
mA  
mA  
A
Non-repetitive peak forward  
current  
tp = 1 μs  
tp = 1 s  
IFSM  
Ptot  
1.0  
A
3501)  
Power dissipation  
mW  
1) Device on Fiberglass Substrate, see layout on second page  
Document Number 85728  
Rev. 1.4, 03-Jan-06  
www.vishay.com  
1

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