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GSD2004S PDF预览

GSD2004S

更新时间: 2024-01-06 18:27:40
品牌 Logo 应用领域
威世 - VISHAY 整流二极管开关光电二极管
页数 文件大小 规格书
4页 64K
描述
Dual In-Series Small-Signal High-Voltage Switching Diode

GSD2004S 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.84Base Number Matches:1

GSD2004S 数据手册

 浏览型号GSD2004S的Datasheet PDF文件第2页浏览型号GSD2004S的Datasheet PDF文件第3页浏览型号GSD2004S的Datasheet PDF文件第4页 
GSD2004S  
Vishay Semiconductors  
VISHAY  
Dual In-Series Small-Signal High-Voltage Switching Diode  
Features  
• Silicon Epitaxial Planar Diode  
2
3
• Fast switching dual in-series diode, especially  
1
suited for applications requiring high voltage  
capability  
1
2
18545  
3
Mechanical Data  
Case: SOT-23 (TO-236AB) Plastic case  
Weight: approx. 8.8 mg  
Packaging Codes/Options:  
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box  
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box  
Parts Table  
Part  
Ordering code  
Marking  
Remarks  
GSD2004S  
GSD2004S-GS18 or GSD2004S-GS08  
DB6  
Tape and Reel  
Absolute Maximum Ratings  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
240  
Unit  
Continuous reverse voltage  
Peak repetitive reverse voltage  
Peak repetitive reverse current  
Forward current (continuous)  
Peak repetitive forward current  
V
V
V
R
V
300  
200  
225  
625  
4.0  
RRM  
RRM  
I
mA  
mA  
mA  
A
I
F
I
RFM  
Non-repetitive peak forward  
current  
t = 1 µs  
I
p
FSM  
t = 1 s  
I
1.0  
A
p
FSM  
1)  
Power dissipation  
P
mW  
tot  
350  
1)  
Device on Fiberglass Substrate, see layout on second page  
Thermal Characteristics  
T
= 25 °C, unless otherwise specified  
amb  
Parameter  
Test condition  
Symbol  
Value  
Unit  
1)  
Typical thermal resistance  
junction to ambiant air  
R
°C/W  
thJA  
357  
Junction temperature  
T
150  
°C  
°C  
j
Storage temperature range  
T
- 65 to + 150  
S
1)  
Device on Fiberglass Substrate, see layout on second page  
Document Number 85728  
Rev. 1.3, 08-Jul-04  
www.vishay.com  
1

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