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GSD2004C-HE3-08 PDF预览

GSD2004C-HE3-08

更新时间: 2024-01-23 19:35:45
品牌 Logo 应用领域
威世 - VISHAY 光电二极管
页数 文件大小 规格书
4页 90K
描述
Rectifier Diode, 2 Element, 0.225A, 300V V(RRM), Silicon, GREEN PACKAGE-3

GSD2004C-HE3-08 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:R-PDSO-G3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.70Factory Lead Time:12 weeks
风险等级:5.58配置:COMMON CATHODE, 2 ELEMENTS
二极管元件材料:SILICON二极管类型:RECTIFIER DIODE
JESD-30 代码:R-PDSO-G3元件数量:2
端子数量:3最高工作温度:150 °C
最低工作温度:-55 °C最大输出电流:0.225 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大功率耗散:0.35 W参考标准:AEC-Q101
最大重复峰值反向电压:300 V最大反向恢复时间:0.05 µs
表面贴装:YES端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

GSD2004C-HE3-08 数据手册

 浏览型号GSD2004C-HE3-08的Datasheet PDF文件第2页浏览型号GSD2004C-HE3-08的Datasheet PDF文件第3页浏览型号GSD2004C-HE3-08的Datasheet PDF文件第4页 
GSD2004C  
Vishay Semiconductors  
www.vishay.com  
Dual Common Cathode Small Signal High Voltage Switching Diode  
FEATURES  
• Silicon epitaxial planar diode  
3
• Fast switching dual common cathode diode,  
especially suited for applications requiring high  
voltage capability  
• AEC-Q101 qualified  
1
2
• Base P/N-E3 - RoHS-compliant, commercial  
grade  
18108_1  
• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified  
• Material categorization: For definitions of compliance  
please see www.vishay.com/doc?99912  
MECHANICAL DATA  
Case: SOT-23  
Weight: approx. 8.8 mg  
Packaging codes/options:  
18/10K per 13" reel (8 mm tape), 10K/box  
08/3K per 7" reel (8 mm tape), 15K/box  
PARTS TABLE  
PART  
ORDERING CODE  
INTERNAL CONSTRUCTION  
TYPE MARKING  
REMARKS  
GSD2004C-E3-08 or GSD2004C-E3-18  
GSD2004C-HE3-08 or GSD2004C-HE3-18  
GSD2004C  
Dual diodes common cathode  
DBC  
Tape and reel  
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
240  
300  
225  
625  
4
UNIT  
V
Continuous reverse voltage  
Peak repetitive reverse voltage  
Forward current (continuous)  
Peak repetitive forward current  
VR  
VRRM  
IF  
V
mA  
mA  
A
IFRM  
tp = 1 μs  
tp = 1 s  
Non-repetitive peak forward current  
Power dissipation (1)  
IFSM  
Ptot  
1
A
350  
mW  
THERMAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)  
PARAMETER  
TEST CONDITION  
SYMBOL  
VALUE  
UNIT  
Typical thermal resistance junction to  
ambient air (1)  
RthJA  
357  
°C/W  
Junction temperature  
Tj  
150  
°C  
°C  
°C  
Storage temperature range  
Operating temperature range  
Tstg  
Top  
- 65 to + 150  
- 55 to + 150  
Note  
(1)  
Device on fiberglass substrate  
Rev. 1.0, 17-May-13  
Document Number: 85424  
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT  
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000  

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