Datasheet > GSBC857BT

GSBC857BT

更新时间： 2024-11-21 20:05:23

品牌	Logo	应用领域
固锝 - GOOD-ARK		/
页数	文件大小	规格书
4页	747K
描述
Small Signal Bipolar Transistor,

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中文翻译

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技术参数
数据手册

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GSBC857BT 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	compliant	风险等级：	5.75
Base Number Matches：	1

GSBC857BT 数据手册

GSBC857xT

PNP Transistor

Features

■

Ideal for automatic insertion

■

For switching and AF amplifier applications

SOT-523

Absolute Maximum Ratings (T_A= 25 °C unless otherwise noted)

1. BASE

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Symbol

Value

Unit

2. EMITTER

3. COLLECTOR

V^CBO

-50

VCEO

-45

VEBO

-6

Collector Current –Continuous

-0.1

Collector Power Dissipation

Junction Temperature

Storage Temperature

P^C*

150

℃

150

℃

TSTG

-55 to +150

Electrical Characteristics (T_A= 25 °C unless otherwise noted)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Collector-Base Breakdown Voltage

V(BR)CBO

IC= -10µA, IE=0

-50

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

V(BR)CEO

V(BR)EBO

IC= -10mA, IB=0

IE= -1µA, IC=0

-45

-6

Collector Cutoff Current

DC Current Gain

ICBO

hFE

VCB=-30V

-15

VCE= -5V, IC= -2mA

125

800

-0.3

I_C=-10mA, I_B=-0.5mA

I_C=-100mA, I_B=-5mA

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

Base-Emitter Voltage

VCE(sat)

-0.65

I_C=-10mA, I_B=-0.5mA

I_C=-100mA, I_B= -5mA

-0.7

-0.9

VBE(sat)

VBE(on)

VCE= -5V, IC= -2mA

VCE= -5V, IC= -10mA

-750

-820

-600

VCE= -5 V, IC=

-10mA f=100MHz

Transition Frequency

100

MHz

Collector Output Capacitance

Cob

VCB=-10V,f=1MHz

V_CE=-5V,I_C=-0.2mA,

f=1kHz,

4.5

Noise Figure

R_S=2kΩ,BW=200Hz

Classification of h

Rank

Range

125-250

220-475

420-800

1/4

12 3 4

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