Datasheet > GSBC858

GSBC858

更新时间： 2024-11-21 03:39:59

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	147K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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数据手册

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GSBC858 数据手册

ISSUED DATE :2005/06/08

REVISED DATE :

GTM

CORPORATION

GSBC858

P N P E P I T A X I A L P L A N A R T R A N S I S T O R

Description

The GSBC858 is designed for switching and AF amplifier application, suitable for automatic insertion in thick and thin-film circuits.

Package Dimensions

Millimeter

REF.

Min.

Max.

1.10

0.10

1.00

2.20

1.35

2.40

Min.

Max.

0.80

0.42 REF.

0.15

0.25

0.10

0.35

0.40

0.25

0.80

1.80

1.15

1.80

0.65 REF.

0.15 BSC.

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Storage Temperature

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current

Symbol

Ratings

Unit

+150

Tstg

-55 ~ +150

VCBO

VCEO

VEBO

-30

-5

100

225

Total Power Dissipation

Characteristics at Ta = 25к

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-30

IC=-100uA

IC=-1mA

BVCEO

-30

BVEBO

-5

IE=-10uA

VCB=-30V

ICBO

-90

-250

-700

-900

-15

-300

-650

VCE(sat)1

VCE(sat)2

VBE(sat)1

VBE(sat)2

VBE(on)1

VBE(on)2

IC=-10mA, IB=-0.5mA

IC=-100mA, IB=-5mA

IC=-10mA, IB=-0.5mA

IC=-100mA, IB=-5mA

VCE=-5V, IC=-2mA

-600

-750

-820

800

110

VCE=-5V, IC=-10mA

hFE

VCE=-5V, IC=-2mA

150

MHz

VCE=-5V, IC=-10mA, f=100MHz

VCB=-10V, f=1MHz, IE=0A

Cob

Classification Of hFE

Rank

9CA

9CB

200 - 450

9CC

420 – 800

Range

110 - 220

GSBC858

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