Datasheet > GSB772S

GSB772S

更新时间： 2024-09-17 03:39:59

品牌	Logo	应用领域
GTM		晶体晶体管局域网
页数	文件大小	规格书
2页	127K
描述
PNP EPITAXIAL PLANAR TRANSISTOR

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中文翻译

获取价格

数据手册

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GSB772S 数据手册

ISSUED DATE :2004/09/13

REVISED DATE :2004/11/29B

GTM

CORPORATION

GSB772S

P N P E P I TA X I A L P L A N A R T R A N S I S T O R

Description

The GSB772S is designed for using in output stage of 0.75W amplifier, voltage regulator, DC-DC converter and driver.

Package Dimensions

S 1

TO-92

S E A T IN G

P L A N E

Millimeter

REF.

Min.

4.45

1.02

0.36

Max.

4.7

Min.

4.44

3.30

12.70

1.150

2.42

Max.

4.7

3.81

0.51

0.76

0.51

1.390

2.66

Absolute Maximum Ratings at Ta = 25к

Parameter

Junction Temperature

Symbol

Ratings

+150

-55 ~ +150

-40

Unit

Storage Temperature

Tstg

Collector to Base Voltage at Ta=25к

Collector to Emitter Voltage at Ta=25к

Emitter to Base Voltage at Ta=25к

Collector Current at Ta=25к

VCBO

VCEO

VEBO

-30

-5.0

-3.0

Total Power Dissipation at Ta=25к

750

Characteristics at Ta = 25к

Symbol

Min.

Typ.

Max.

Unit

Test Conditions

BVCBO

-40

IC=-100uA

BVCEO

BVEBO

ICBO

-30

IC=-10mA

-5

IE=-10uA

-1

-0.5

-2

VCB=-30V

IEBO

VEB=-3V

*VCE(sat)

*VBE(sat)

*hFE1

*hFE2

-0.3

-1

IC=-2A, IB=-0.2A

VCE=-2V, IC=-20mA

VCE=-2V, IC=-1A

100

160

500

MHz

VCE=-20V, IC=-20mA, f=100MHz

VCB=-10V, f=1MHz

Cob

*Pulse Test: Pulse WidthЉ380us, Duty CycleЉ2%

Classification Of hFE

Rank

Range

100-200

160-320

250-500

GSB772S

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