Datasheet > 存储 > SRAM> GS8640Z18T-167

GS8640Z18T-167

更新时间： 2024-11-13 04:56:23

品牌	Logo	应用领域
GSI		存储内存集成电路静态存储器
页数	文件大小	规格书
25页	1035K
描述
72Mb Pipelined and Flow Through Synchronous NBT SRAM

阅读下载

中文翻译

获取价格

技术参数
数据手册

如果您发现信息不准确，欢迎纠错

GS8640Z18T-167 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	QFP	包装说明：	LQFP,
针数：	100	Reach Compliance Code：	compliant
ECCN代码：	3A991.B.2.B	HTS代码：	8542.32.00.41
风险等级：	5.32	Is Samacsys：	N
最长访问时间：	8 ns	其他特性：	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 3.3V SUPPLY
JESD-30 代码：	R-PQFP-G100	长度：	20 mm
内存密度：	75497472 bit	内存集成电路类型：	ZBT SRAM
内存宽度：	18	湿度敏感等级：	3
功能数量：	1	端子数量：	100
字数：	4194304 words	字数代码：	4000000
工作模式：	SYNCHRONOUS	最高工作温度：	70 °C
最低工作温度：		组织：	4MX18
封装主体材料：	PLASTIC/EPOXY	封装代码：	LQFP
封装形状：	RECTANGULAR	封装形式：	FLATPACK, LOW PROFILE
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	NOT SPECIFIED
认证状态：	Not Qualified	座面最大高度：	1.6 mm
最大供电电压 (Vsup)：	2.7 V	最小供电电压 (Vsup)：	2.3 V
标称供电电压 (Vsup)：	2.5 V	表面贴装：	YES
技术：	CMOS	温度等级：	COMMERCIAL
端子形式：	GULL WING	端子节距：	0.65 mm
端子位置：	QUAD	处于峰值回流温度下的最长时间：	NOT SPECIFIED
宽度：	14 mm	Base Number Matches：	1

GS8640Z18T-167 数据手册

Product Preview

GS8640Z18/36T-300/250/200/167

300 MHz–167 MHz

100-Pin TQFP

Commercial Temp

Industrial Temp

72Mb Pipelined and Flow Through

Synchronous NBT SRAM

2.5 V or 3.3 V V

2.5 V or 3.3 V I/O

Because it is a synchronous device, address, data inputs, and

read/ write control inputs are captured on the rising edge of the

input clock. Burst order control (LBO) must be tied to a power

rail for proper operation. Asynchronous inputs include the

Sleep mode enable (ZZ) and Output Enable. Output Enable can

be used to override the synchronous control of the output

drivers and turn the RAM's output drivers off at any time.

Write cycles are internally self-timed and initiated by the rising

edge of the clock input. This feature eliminates complex off-

chip write pulse generation required by asynchronous SRAMs

and simplifies input signal timing.

Features

• NBT (No Bus Turn Around) functionality allows zero wait

read-write-read bus utilization; Fully pin-compatible with

both pipelined and flow through NtRAM™, NoBL™ and

ZBT™ SRAMs

• 2.5 V or 3.3 V +10%/–10% core power supply

• 2.5 V or 3.3 V I/O supply

• User-configurable Pipeline and Flow Through mode

• LBO pin for Linear or Interleave Burst mode

• Pin compatible with 4Mb, 9Mb, 18Mb and 36Mb devices

• Byte write operation (9-bit Bytes)

• 3 chip enable signals for easy depth expansion

• ZZ Pin for automatic power-down

• JEDEC-standard 100-lead TQFP package

• RoHS-compliant 100-lead TQFP package available

The GS8640Z18/36T may be configured by the user to operate

in Pipeline or Flow Through mode. Operating as a pipelined

synchronous device, meaning that in addition to the rising edge

triggered registers that capture input signals, the device

incorporates a rising-edge-triggered output register. For read

cycles, pipelined SRAM output data is temporarily stored by

the edge triggered output register during the access cycle and

then released to the output drivers at the next rising edge of

clock.

Functional Description

The GS8640Z18/36T is a 72Mbit Synchronous Static SRAM.

GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other

pipelined read/double late write or flow through read/single

late write SRAMs, allow utilization of all available bus

bandwidth by eliminating the need to insert deselect cycles

when the device is switched from read to write cycles.

The GS8640Z18/36T is implemented with GSI's high

performance CMOS technology and is available in a JEDEC-

standard 100-pin TQFP package.

Parameter Synopsis

-300

-250

-200

-167

Unit

2.3

3.3

2.5

4.0

3.0

5.0

3.5

6.0

Pipeline

3-1-1-1

tCycle

Curr (x18)

Curr (x32/x36)

400

480

340

410

290

350

260

305

5.5

6.5

7.5

8.0

Flow

Through

2-1-1-1

tCycle

Curr (x18)

Curr (x32/x36)

285

330

245

280

220

250

210

240

*All GSI Technology packages are at least 5/6 RoHS compliant.

Packages listed with the additional “G” designator are 6/6 RoHS compliant.

Rev: 1.01 1/2006

1/25

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...25

中文翻译

下载PDF

与GS8640Z18T-167相关器件

型号	品牌	获取价格	描述	数据表
GS8640Z18T-167I	GSI	获取价格	72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640Z18T-167IT	GSI	获取价格	ZBT SRAM, 4MX18, 8ns, CMOS, PQFP100, TQFP-100
GS8640Z18T-167IV	GSI	获取价格	72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640Z18T-167IVT	GSI	获取价格	ZBT SRAM, 4MX18, 8ns, CMOS, PQFP100, TQFP-100
GS8640Z18T-167T	GSI	获取价格	ZBT SRAM, 4MX18, 8ns, CMOS, PQFP100, TQFP-100
GS8640Z18T-167V	GSI	获取价格	72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640Z18T-167VT	GSI	获取价格	ZBT SRAM, 4MX18, 8ns, CMOS, PQFP100, TQFP-100
GS8640Z18T-200	GSI	获取价格	72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640Z18T-200I	GSI	获取价格	72Mb Pipelined and Flow Through Synchronous NBT SRAM
GS8640Z18T-200IT	GSI	获取价格	暂无描述

与GS8640Z18T-167相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

26
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

10
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

11
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

GS8640Z18T-167

GS8640Z18T-167 技术参数

GS8640Z18T-167 数据手册

与GS8640Z18T-167相关器件

与GS8640Z18T-167相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

GS8640Z18T-167

GS8640Z18T-167 技术参数

GS8640Z18T-167 数据手册

与GS8640Z18T-167相关器件

与GS8640Z18T-167相关文章

您还可以找

您在本页遇到什么问题？