Datasheet > GS8320E18T-225T

GS8320E18T-225T

更新时间： 2024-11-19 21:04:39

品牌	Logo	应用领域
GSI		静态存储器内存集成电路
页数	文件大小	规格书
25页	1704K
描述
Cache SRAM, 2MX18, 6ns, CMOS, PQFP100, TQFP-100

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GS8320E18T-225T 技术参数

是否Rohs认证：	不符合	生命周期：	Obsolete
零件包装代码：	QFP	包装说明：	LQFP,
针数：	100	Reach Compliance Code：	unknown
ECCN代码：	3A991.B.2.B	HTS代码：	8542.32.00.41
风险等级：	5.82	最长访问时间：	6 ns
其他特性：	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES AT 2.5V SUPPLY	JESD-30 代码：	R-PQFP-G100
长度：	20 mm	内存密度：	37748736 bit
内存集成电路类型：	CACHE SRAM	内存宽度：	18
湿度敏感等级：	3	功能数量：	1
端子数量：	100	字数：	2097152 words
字数代码：	2000000	工作模式：	SYNCHRONOUS
最高工作温度：	70 °C	最低工作温度：
组织：	2MX18	封装主体材料：	PLASTIC/EPOXY
封装代码：	LQFP	封装形状：	RECTANGULAR
封装形式：	FLATPACK, LOW PROFILE	并行/串行：	PARALLEL
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
座面最大高度：	1.6 mm	最大供电电压 (Vsup)：	2 V
最小供电电压 (Vsup)：	1.7 V	标称供电电压 (Vsup)：	1.8 V
表面贴装：	YES	技术：	CMOS
温度等级：	COMMERCIAL	端子形式：	GULL WING
端子节距：	0.65 mm	端子位置：	QUAD
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	14 mm
Base Number Matches：	1

GS8320E18T-225T 数据手册

GS8320E18/32/36T-250/225/200/166/150/133

250 MHz–133 MHz

100-Pin TQFP

Commercial Temp

Industrial Temp

2M x 18, 1M x 32, 1M x 36

36Mb Sync Burst SRAMs

2.5 V or 3.3 V V

2.5 V or 3.3 V I/O

interleave order with the Linear Burst Order (LBO) input. The

Burst function need not be used. New addresses can be loaded

on every cycle with no degradation of chip performance.

Features

• FT pin for user-configurable flow through or pipeline

operation

• Dual Cycle Deselect (DCD) operation

• 2.5 V or 3.3 V +10%/–10% core power supply

• 2.5 V or 3.3 V I/O supply

• LBO pin for Linear or Interleaved Burst mode

• Internal input resistors on mode pins allow floating mode pins

• Default to Interleaved Pipeline mode

• Byte Write (BW) and/or Global Write (GW) operation

• Internal self-timed write cycle

• Automatic power-down for portable applications

• JEDEC-standard 100-lead TQFP package

• Pb-Free 100-lead TQFP package available

Flow Through/Pipeline Reads

The function of the Data Output register can be controlled by

the user via the FT mode pin (Pin 14). Holding the FT mode

pin low places the RAM in Flow Through mode, causing

output data to bypass the Data Output Register. Holding FT

high places the RAM in Pipeline mode, activating the rising-

edge-triggered Data Output Register.

DCD Pipelined Reads

The GS8320E18/32/36T is a DCD (Dual Cycle Deselect)

pipelined synchronous SRAM. SCD (Single Cycle Deselect)

versions are also available. DCD SRAMs pipeline disable

commands to the same degree as read commands. DCD RAMs

hold the deselect command for one full cycle and then begin

turning off their outputs just after the second rising edge of

clock.

Functional Description

Applications

The GS8320E18/32/36T is a 37,748,736-bit high performance

synchronous SRAM with a 2-bit burst address counter.

Although of a type originally developed for Level 2 Cache

applications supporting high performance CPUs, the device

now finds application in synchronous SRAM applications,

ranging from DSP main store to networking chip set support.

Byte Write and Global Write

Byte write operation is performed by using Byte Write enable

(BW) input combined with one or more individual byte write

signals (Bx). In addition, Global Write (GW) is available for

writing all bytes at one time, regardless of the Byte Write

control inputs.

Controls

Addresses, data I/Os, chip enables (E1, E2, E3), address burst

control inputs (ADSP, ADSC, ADV), and write control inputs

(Bx, BW, GW) are synchronous and are controlled by a

positive-edge-triggered clock input (CK). Output enable (G)

and power down control (ZZ) are asynchronous inputs. Burst

cycles can be initiated with either ADSP or ADSC inputs. In

Burst mode, subsequent burst addresses are generated

internally and are controlled by ADV. The burst address

counter may be configured to count in either linear or

Sleep Mode

Low power (Sleep mode) is attained through the assertion

(High) of the ZZ signal, or by stopping the clock (CK).

Memory data is retained during Sleep mode.

Core and Interface Voltages

The GS8320E18/32/36T operates on a 2.5 V or 3.3 V power

supply. All input are 3.3 V and 2.5 V compatible. Separate

output power (V

) pins are used to decouple output noise

DDQ

from the internal circuits and are 3.3 V and 2.5 V compatible.

Parameter Synopsis

-250 -225 -200 -166 -150 -133 Unit

2.5 2.7 3.0 3.5 3.8 4.0 ns

4.0 4.4 5.0 6.0 6.6 7.5 ns

Pipeline

3-1-1-1

tCycle

Curr (x18) 285 265 245 220 210 185 mA

Curr (x32/x36) 350 320 295 260 240 215 mA

6.5 7.0 7.5 8.0 8.5 8.5 ns

Flow

Through

2-1-1-1

tCycle

Curr (x18) 205 195 185 175 165 155 mA

Curr (x32/x36) 235 225 210 200 190 175 mA

Rev: 1.02a 12/2007

1/25

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...25

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与GS8320E18T-225T相关器件

型号	品牌	获取价格	描述	数据表
GS8320E18T-225VT	GSI	获取价格	暂无描述
GS8320E18T-250	GSI	获取价格	2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8320E18T-250I	GSI	获取价格	2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8320E18T-250IT	GSI	获取价格	Cache SRAM, 2MX18, 5.5ns, CMOS, PQFP100, TQFP-100
GS8320E18T-250IV	GSI	获取价格	Cache SRAM, 2MX18, 5.5ns, CMOS, PQFP100, TQFP-100
GS8320E18T-250T	GSI	获取价格	Cache SRAM, 2MX18, 5.5ns, CMOS, PQFP100, TQFP-100
GS8320E18T-250VT	GSI	获取价格	Cache SRAM, 2MX18, 5.5ns, CMOS, PQFP100, TQFP-100
GS8320E18T-V	GSI	获取价格	2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs
GS8320E32AGT-150	GSI	获取价格	100 TQFP
GS8320E32AGT-150I	GSI	获取价格	Cache SRAM, 1MX32, 7.5ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100

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