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GS81302D06E-500 PDF预览

GS81302D06E-500

更新时间: 2024-12-01 13:47:55
品牌 Logo 应用领域
GSI /
页数 文件大小 规格书
31页 515K
描述
165 BGA

GS81302D06E-500 技术参数

是否Rohs认证: 不符合生命周期:Not Recommended
零件包装代码:BGA包装说明:LBGA,
针数:165Reach Compliance Code:compliant
ECCN代码:3A991.B.2.BHTS代码:8542.32.00.41
Factory Lead Time:12 weeks风险等级:5.61
最长访问时间:0.37 ns其他特性:PIPELINED ARCHITECTURE
JESD-30 代码:R-PBGA-B165长度:17 mm
内存密度:134217728 bit内存集成电路类型:DDR SRAM
内存宽度:8功能数量:1
端子数量:165字数:16777216 words
字数代码:16000000工作模式:SYNCHRONOUS
组织:16MX8封装主体材料:PLASTIC/EPOXY
封装代码:LBGA封装形状:RECTANGULAR
封装形式:GRID ARRAY, LOW PROFILE并行/串行:PARALLEL
峰值回流温度(摄氏度):NOT SPECIFIED认证状态:Not Qualified
座面最大高度:1.5 mm最大供电电压 (Vsup):1.9 V
最小供电电压 (Vsup):1.7 V标称供电电压 (Vsup):1.8 V
表面贴装:YES技术:CMOS
端子形式:BALL端子节距:1 mm
端子位置:BOTTOM处于峰值回流温度下的最长时间:NOT SPECIFIED
宽度:15 mm

GS81302D06E-500 数据手册

 浏览型号GS81302D06E-500的Datasheet PDF文件第2页浏览型号GS81302D06E-500的Datasheet PDF文件第3页浏览型号GS81302D06E-500的Datasheet PDF文件第4页浏览型号GS81302D06E-500的Datasheet PDF文件第5页浏览型号GS81302D06E-500的Datasheet PDF文件第6页浏览型号GS81302D06E-500的Datasheet PDF文件第7页 
GS81302D06/11/20/38E-500/450/400/350  
500 MHz–350 MHz  
165-Bump BGA  
Commercial Temp  
Industrial Temp  
144Mb SigmaQuad-II+  
Burst of 4 SRAM  
1.8 V V  
DD  
1.8 V or 1.5 V I/O  
are just one element in a family of low power, low voltage  
HSTL I/O SRAMs designed to operate at the speeds needed to  
implement economical high performance networking systems.  
Features  
• 2.5 Clock Latency  
• Simultaneous Read and Write SigmaQuad™ Interface  
• JEDEC-standard pinout and package  
• Dual Double Data Rate interface  
• Byte Write controls sampled at data-in time  
• Burst of 4 Read and Write  
• On-Die Termination (ODT) on Data (D), Byte Write (BW),  
and Clock (K, K) intputs  
• 1.8 V +100/–100 mV core power supply  
• 1.5 V or 1.8 V HSTL Interface  
Clocking and Addressing Schemes  
The GS81302D06/11/20/38E SigmaQuad-II+ SRAMs are  
synchronous devices. They employ two input register clock  
inputs, K and K. K and K are independent single-ended clock  
inputs, not differential inputs to a single differential clock input  
buffer.  
• Pipelined read operation  
• Fully coherent read and write pipelines  
• ZQ pin for programmable output drive strength  
• Data Valid Pin (QVLD) Support  
• IEEE 1149.1 JTAG-compliant Boundary Scan  
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package  
• RoHS-compliant 165-bump BGA package available  
Each internal read and write operation in a SigmaQuad-II+ B4  
RAM is four times wider than the device I/O bus. An input  
data bus de-multiplexer is used to accumulate incoming data  
before it is simultaneously written to the memory array. An  
output data multiplexer is used to capture the data produced  
from a single memory array read and then route it to the  
appropriate output drivers as needed. Therefore the address  
field of a SigmaQuad-II+ B4 RAM is always two address pins  
less than the advertised index depth (e.g., the 16M x 8 has a  
4M addressable index).  
SigmaQuadFamily Overview  
The GS81302D06/11/20/38E are built in compliance with the  
SigmaQuad-II+ SRAM pinout standard for Separate I/O  
synchronous SRAMs. They are 150,994,944-bit (144Mb)  
SRAMs. The GS81302D06/11/20/38E SigmaQuad SRAMs  
Parameter Synopsis  
-500  
2.0 ns  
0.45 ns  
-450  
2.2 ns  
0.45 ns  
-400  
2.5 ns  
0.45 ns  
-350  
tKHKH  
tKHQV  
2.86 ns  
0.45 ns  
Rev: 1.05c 8/2017  
1/31  
© 2011, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

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