5秒后页面跳转
GS81302D06E-500I PDF预览

GS81302D06E-500I

更新时间: 2024-12-01 01:24:15
品牌 Logo 应用领域
GSI /
页数 文件大小 规格书
31页 526K
描述
JEDEC-standard pinout and package

GS81302D06E-500I 数据手册

 浏览型号GS81302D06E-500I的Datasheet PDF文件第2页浏览型号GS81302D06E-500I的Datasheet PDF文件第3页浏览型号GS81302D06E-500I的Datasheet PDF文件第4页浏览型号GS81302D06E-500I的Datasheet PDF文件第5页浏览型号GS81302D06E-500I的Datasheet PDF文件第6页浏览型号GS81302D06E-500I的Datasheet PDF文件第7页 
GS81302D06/11/20/38E-500/450/400/350  
500 MHz–350 MHz  
165-Bump BGA  
Commercial Temp  
Industrial Temp  
144Mb SigmaQuad-II+  
Burst of 4 SRAM  
1.8 V V  
DD  
1.8 V or 1.5 V I/O  
are just one element in a family of low power, low voltage  
HSTL I/O SRAMs designed to operate at the speeds needed to  
implement economical high performance networking systems.  
Features  
• 2.5 Clock Latency  
• Simultaneous Read and Write SigmaQuad™ Interface  
• JEDEC-standard pinout and package  
• Dual Double Data Rate interface  
• Byte Write controls sampled at data-in time  
• Burst of 4 Read and Write  
• On-Die Termination (ODT) on Data (D), Byte Write (BW),  
and Clock (K, K) intputs  
• 1.8 V +100/–100 mV core power supply  
• 1.5 V or 1.8 V HSTL Interface  
Clocking and Addressing Schemes  
The GS81302D06/11/20/38E SigmaQuad-II+ SRAMs are  
synchronous devices. They employ two input register clock  
inputs, K and K. K and K are independent single-ended clock  
inputs, not differential inputs to a single differential clock input  
buffer.  
• Pipelined read operation  
• Fully coherent read and write pipelines  
• ZQ pin for programmable output drive strength  
• Data Valid Pin (QVLD) Support  
• IEEE 1149.1 JTAG-compliant Boundary Scan  
• 165-bump, 15 mm x 17 mm, 1 mm bump pitch BGA package  
• RoHS-compliant 165-bump BGA package available  
Each internal read and write operation in a SigmaQuad-II+ B4  
RAM is four times wider than the device I/O bus. An input  
data bus de-multiplexer is used to accumulate incoming data  
before it is simultaneously written to the memory array. An  
output data multiplexer is used to capture the data produced  
from a single memory array read and then route it to the  
appropriate output drivers as needed. Therefore the address  
field of a SigmaQuad-II+ B4 RAM is always two address pins  
less than the advertised index depth (e.g., the 16M x 8 has a  
4M addressable index).  
SigmaQuadFamily Overview  
The GS81302D06/11/20/38E are built in compliance with the  
SigmaQuad-II+ SRAM pinout standard for Separate I/O  
synchronous SRAMs. They are 150,994,944-bit (144Mb)  
SRAMs. The GS81302D06/11/20/38E SigmaQuad SRAMs  
Parameter Synopsis  
-500  
2.0 ns  
0.45 ns  
-450  
2.2 ns  
0.45 ns  
-400  
2.5 ns  
0.45 ns  
-350  
tKHKH  
tKHQV  
2.86 ns  
0.45 ns  
Rev: 1.05c 8/2017  
1/31  
© 2011, GSI Technology  
Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.  

与GS81302D06E-500I相关器件

型号 品牌 获取价格 描述 数据表
GS81302D06GE-350 GSI

获取价格

JEDEC-standard pinout and package
GS81302D06GE-350I GSI

获取价格

144Mb SigmaQuad-II Burst of 4 SRAM
GS81302D06GE-400 GSI

获取价格

DDR SRAM, 16MX8, 0.45ns, CMOS, PBGA165, FPBGA-165
GS81302D06GE-400I GSI

获取价格

DDR SRAM, 16MX8, 0.45ns, CMOS, PBGA165, FPBGA-165
GS81302D06GE-400IT GSI

获取价格

DDR SRAM, 16MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
GS81302D06GE-400T GSI

获取价格

DDR SRAM, 16MX8, 0.45ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
GS81302D06GE-450 GSI

获取价格

DDR SRAM, 16MX8, 0.37ns, CMOS, PBGA165, FPBGA-165
GS81302D06GE-450I GSI

获取价格

Dual Double Data Rate interface
GS81302D06GE-450IT GSI

获取价格

DDR SRAM, 16MX8, 0.37ns, CMOS, PBGA165, 15 X 17 MM, 1 MM PITCH, ROHS COMPLIANT, FPBGA-165
GS81302D06GE-500 GSI

获取价格

165 BGA