Datasheet > GS81284Z36GB-167VT

GS81284Z36GB-167VT

更新时间： 2024-12-01 07:36:19

品牌	Logo	应用领域
GSI		静态存储器
页数	文件大小	规格书
28页	629K
描述
ZBT SRAM, 4MX36, 8ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119

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GS81284Z18/36B-xxxV

119-Bump BGA

Commercial Temp

Industrial Temp

200 MHz–167 MHz

144Mb Pipelined and Flow Through

Synchronous NBT SRAM

1.8 V or 2.5 V V

1.8 V or 2.5 V I/O

Because it is a synchronous device, address, data inputs, and

read/write control inputs are captured on the rising edge of the

input clock. Burst order control (LBO) must be tied to a power

rail for proper operation. Asynchronous inputs include the

Sleep mode enable (ZZ) and Output Enable. Output Enable can

be used to override the synchronous control of the output

drivers and turn the RAM's output drivers off at any time.

Write cycles are internally self-timed and initiated by the rising

edge of the clock input. This feature eliminates complex off-

chip write pulse generation required by asynchronous SRAMs

and simplifies input signal timing.

Features

• NBT (No Bus Turn Around) functionality allows zero wait

Read-Write-Read bus utilization; fully pin-compatible with

both pipelined and flow through NtRAM™, NoBL™ and

ZBT™ SRAMs

• 1.8 V 2.5 V core power supply

• 1.8 V or 2.5 V I/O supply

• User-configurable Pipeline and Flow Through mode

• ZQ mode pin for user-selectable high/low output drive

• IEEE 1149.1 JTAG-compatible Boundary Scan

• LBO pin for Linear or Interleave Burst mode

• Pin-compatible with 8Mb, 36Mb, and 72Mb devices

• Byte write operation (9-bit Bytes)

• 3 chip enable signals for easy depth expansion

• ZZ Pin for automatic power-down

• JEDEC-standard 119-BGA package

The GS81284Z18/36-xxxV may be configured by the user to

operate in Pipeline or Flow Through mode. Operating as a

pipelined synchronous device, in addition to the rising-edge-

triggered registers that capture input signals, the device

incorporates a rising edge triggered output register. For read

cycles, pipelined SRAM output data is temporarily stored by

the edge-triggered output register during the access cycle and

then released to the output drivers at the next rising edge of

clock.

• RoHS-compliant 119-BGA packages available

Functional Description

The GS81284Z18/36(B)-xxxV is a 144Mbit Synchronous

Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL

or other pipelined read/double late write or flow through read/

single late write SRAMs, allow utilization of all available bus

bandwidth by eliminating the need to insert deselect cycles

when the device is switched from read to write cycles.

The GS81284Z18/36-xxxV is implemented with GSI's high

performance CMOS technology and is available in a JEDEC-

standard 119-bump p BGA package.

Parameter Synopsis

-200

-167

Unit

t_KQ

3.0

5.0

3.4

6.0

tCycle

Pipeline

3-1-1-1

Curr (x18)

Curr (x36)

420

480

385

430

t_KQ

7.5

8.0

tCycle

Flow Through

2-1-1-1

Curr (x18)

Curr (x36)

340

370

330

360

Rev: 1.02 7/2010

1/28

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...28

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与GS81284Z36GB-167VT相关器件

型号	品牌	获取价格	描述	数据表
GS81284Z36GB-200	GSI	获取价格	119 BGA
GS81284Z36GB-200I	GSI	获取价格	119 BGA
GS81284Z36GB-200IV	GSI	获取价格	ZBT SRAM, 4MX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-11
GS81284Z36GB-200IVT	GSI	获取价格	ZBT SRAM, 4MX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-11
GS81284Z36GB-200V	GSI	获取价格	ZBT SRAM, 4MX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-11
GS81284Z36GB-200VI	GSI	获取价格	ZBT SRAM, 4MX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-11
GS81284Z36GB-200VIT	GSI	获取价格	ZBT SRAM, 4MX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-11
GS81284Z36GB-250	GSI	获取价格	119 BGA
GS81284Z36GB-250I	GSI	获取价格	119 BGA
GS81284Z36GB-300	GSI	获取价格	ZBT SRAM, 4MX36, 5.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-11

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