Datasheet > GS81284Z36GB-200VI

GS81284Z36GB-200VI

更新时间： 2024-11-27 14:42:23

品牌	Logo	应用领域
GSI		静态存储器内存集成电路
页数	文件大小	规格书
28页	955K
描述
ZBT SRAM, 4MX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119

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GS81284Z36GB-200VI 技术参数

是否无铅：	不含铅	是否Rohs认证：	符合
生命周期：	Obsolete	零件包装代码：	BGA
包装说明：	14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119	针数：	119
Reach Compliance Code：	compliant	ECCN代码：	3A991.B.2.B
HTS代码：	8542.32.00.41	风险等级：	5.32
Is Samacsys：	N	最长访问时间：	7.5 ns
其他特性：	FLOW-THROUGH OR PIPELINED ARCHITECTURE; ALSO OPERATES WITH 2.5V	JESD-30 代码：	R-PBGA-B119
JESD-609代码：	e1	长度：	22 mm
内存密度：	150994944 bit	内存集成电路类型：	ZBT SRAM
内存宽度：	36	湿度敏感等级：	3
功能数量：	1	端子数量：	119
字数：	4194304 words	字数代码：	4000000
工作模式：	SYNCHRONOUS	最高工作温度：	85 °C
最低工作温度：	-40 °C	组织：	4MX36
封装主体材料：	PLASTIC/EPOXY	封装代码：	BGA
封装形状：	RECTANGULAR	封装形式：	GRID ARRAY
并行/串行：	PARALLEL	峰值回流温度（摄氏度）：	260
认证状态：	Not Qualified	座面最大高度：	1.99 mm
最大供电电压 (Vsup)：	2 V	最小供电电压 (Vsup)：	1.7 V
标称供电电压 (Vsup)：	1.8 V	表面贴装：	YES
技术：	CMOS	温度等级：	INDUSTRIAL
端子面层：	Tin/Silver/Copper (Sn/Ag/Cu)	端子形式：	BALL
端子节距：	1.27 mm	端子位置：	BOTTOM
处于峰值回流温度下的最长时间：	NOT SPECIFIED	宽度：	14 mm
Base Number Matches：	1

GS81284Z36GB-200VI 数据手册

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Preliminary

GS81284Z18/36B-xxxV

119-Bump BGA

Commercial Temp

Industrial Temp

200 MHz–167 MHz

144Mb Pipelined and Flow Through

Synchronous NBT SRAM

1.8 V or 2.5 V V

1.8 V or 2.5 V I/O

Because it is a synchronous device, address, data inputs, and

read/write control inputs are captured on the rising edge of the

input clock. Burst order control (LBO) must be tied to a power

rail for proper operation. Asynchronous inputs include the

Sleep mode enable (ZZ) and Output Enable. Output Enable can

be used to override the synchronous control of the output

drivers and turn the RAM's output drivers off at any time.

Write cycles are internally self-timed and initiated by the rising

edge of the clock input. This feature eliminates complex off-

chip write pulse generation required by asynchronous SRAMs

and simplifies input signal timing.

Features

• NBT (No Bus Turn Around) functionality allows zero wait

Read-Write-Read bus utilization; fully pin-compatible with

both pipelined and flow through NtRAM™, NoBL™ and

ZBT™ SRAMs

• 1.8 V 2.5 V core power supply

• 1.8 V or 2.5 V I/O supply

• User-configurable Pipeline and Flow Through mode

• ZQ mode pin for user-selectable high/low output drive

• IEEE 1149.1 JTAG-compatible Boundary Scan

• LBO pin for Linear or Interleave Burst mode

• Pin-compatible with 8Mb, 36Mb, and 72Mb devices

• Byte write operation (9-bit Bytes)

• 3 chip enable signals for easy depth expansion

• ZZ Pin for automatic power-down

• JEDEC-standard 119-BGA package

The GS81284Z18/36-xxxV may be configured by the user to

operate in Pipeline or Flow Through mode. Operating as a

pipelined synchronous device, in addition to the rising-edge-

triggered registers that capture input signals, the device

incorporates a rising edge triggered output register. For read

cycles, pipelined SRAM output data is temporarily stored by

the edge-triggered output register during the access cycle and

then released to the output drivers at the next rising edge of

clock.

• RoHS-compliant 119-BGA packages available

Functional Description

The GS81284Z18/36(B)-xxxV is a 144Mbit Synchronous

Static SRAM. GSI's NBT SRAMs, like ZBT, NtRAM, NoBL

or other pipelined read/double late write or flow through read/

single late write SRAMs, allow utilization of all available bus

bandwidth by eliminating the need to insert deselect cycles

when the device is switched from read to write cycles.

The GS81284Z18/36-xxxV is implemented with GSI's high

performance CMOS technology and is available in a JEDEC-

standard 119-bump p BGA package.

Parameter Synopsis

-200

-167

Unit

t_KQ

3.0

5.0

3.4

6.0

tCycle

Pipeline

3-1-1-1

Curr (x18)

Curr (x36)

420

480

385

430

t_KQ

7.5

8.0

tCycle

Flow Through

2-1-1-1

Curr (x18)

Curr (x36)

340

370

330

360

Rev: 1.01 1/2008

1/28

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...28

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与GS81284Z36GB-200VI相关器件

型号	品牌	获取价格	描述	数据表
GS81284Z36GB-200VIT	GSI	获取价格	ZBT SRAM, 4MX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-11
GS81284Z36GB-250	GSI	获取价格	119 BGA
GS81284Z36GB-250I	GSI	获取价格	119 BGA
GS81284Z36GB-300	GSI	获取价格	ZBT SRAM, 4MX36, 5.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-11
GS81284Z36GB-300I	GSI	获取价格	ZBT SRAM, 4MX36, 5.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-11
GS81284Z36GB-300IT	GSI	获取价格	ZBT SRAM, 4MX36, 5.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-11
GS81285Z18GT-167	GSI	获取价格	ZBT SRAM, 8MX18, 8ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
GS81285Z18GT-167IT	GSI	获取价格	ZBT SRAM, 8MX18, 8ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
GS81285Z18GT-167V	GSI	获取价格	ZBT SRAM, 8MX18, 8ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100
GS81285Z18GT-167VT	GSI	获取价格	ZBT SRAM, 8MX18, 8ns, CMOS, PQFP100, ROHS COMPLIANT, TQFP-100

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