Datasheet > GS81284Z36B-300I

GS81284Z36B-300I

更新时间： 2024-12-01 06:08:47

品牌	Logo	应用领域
GSI		静态存储器
页数	文件大小	规格书
30页	1023K
描述
ZBT SRAM, 4MX36, 5.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GS81284Z36B-300I 数据手册

Preliminary

GS81284Z18/36B-300/250/200/167

119-Bump BGA

Commercial Temp

Industrial Temp

300 MHz–167 MHz

144Mb Pipelined and Flow Through

Synchronous NBT SRAM

2.5 V or 3.3 V V

2.5 V or 3.3 V I/O

Features

Because it is a synchronous device, address, data inputs, and

read/write control inputs are captured on the rising edge of the

input clock. Burst order control (LBO) must be tied to a power

rail for proper operation. Asynchronous inputs include the

Sleep mode enable (ZZ) and Output Enable. Output Enable can

be used to override the synchronous control of the output

drivers and turn the RAM's output drivers off at any time.

Write cycles are internally self-timed and initiated by the rising

edge of the clock input. This feature eliminates complex off-

chip write pulse generation required by asynchronous SRAMs

and simplifies input signal timing.

• NBT (No Bus Turn Around) functionality allows zero wait

Read-Write-Read bus utilization; fully pin-compatible with

both pipelined and flow through NtRAM™, NoBL™ and

ZBT™ SRAMs

• 2.5 V or 3.3 V +10%/–10% core power supply

• 2.5 V or 3.3 V I/O supply

• User-configurable Pipeline and Flow Through mode

• ZQ mode pin for user-selectable high/low output drive

• IEEE 1149.1 JTAG-compatible Boundary Scan

• LBO pin for Linear or Interleave Burst mode

• Pin-compatible with 8Mb, 16Mb, 36Mb and 72Mb devices

• Byte write operation (9-bit Bytes)

• 3 chip enable signals for easy depth expansion

• ZZ Pin for automatic power-down

• JEDEC-standard 119-bump BGA package

• RoHS-compliant 119-bump BGA packages available

The GS81284Z18/36 may be configured by the user to operate

in Pipeline or Flow Through mode. Operating as a pipelined

synchronous device, in addition to the rising-edge-triggered

registers that capture input signals, the device incorporates a

rising edge triggered output register. For read cycles, pipelined

SRAM output data is temporarily stored by the edge-triggered

output register during the access cycle and then released to the

output drivers at the next rising edge of clock.

Functional Description

The GS81284Z18/36 is a 144Mbit Synchronous Static SRAM.

GSI's NBT SRAMs, like ZBT, NtRAM, NoBL or other

pipelined read/double late write or flow through read/single

late write SRAMs, allow utilization of all available bus

bandwidth by eliminating the need to insert deselect cycles

when the device is switched from read to write cycles.

The GS81284Z18/36 is implemented with GSI's high

performance CMOS technology and is available in a JEDEC-

standard 119-bump BGA package.

Parameter Synopsis

-300

-250

-200

-167

Unit

t_KQ(x18/x36)

tCycle

2.3

3.3

2.5

4.0

3.0

5.0

3.4

6.0

Pipeline

3-1-1-1

Curr (x18)

Curr (x36)

550

630

480

550

420

480

385

430

t_KQ

5.5

6.5

7.5

8.0

tCycle

Flow Through

2-1-1-1

Curr (x18)

Curr (x36)

420

465

370

405

340

370

330

360

Rev: 1.00 7/2007

1/30

Specifications cited are subject to change without notice. For latest documentation see http://www.gsitechnology.com.

12 3 4 5 6 7...30

中文翻译

下载PDF

与GS81284Z36B-300I相关器件

型号	品牌	获取价格	描述	数据表
GS81284Z36GB-167	GSI	获取价格	119 BGA
GS81284Z36GB-167I	GSI	获取价格	119 BGA
GS81284Z36GB-167IV	GSI	获取价格	144Mb Pipelined and Flow Through Synchronous NBT SRAM
GS81284Z36GB-167IVT	GSI	获取价格	ZBT SRAM, 4MX36, 8ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119
GS81284Z36GB-167V	GSI	获取价格	144Mb Pipelined and Flow Through Synchronous NBT SRAM
GS81284Z36GB-167VI	GSI	获取价格	ZBT SRAM, 4MX36, 8ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119
GS81284Z36GB-167VT	GSI	获取价格	ZBT SRAM, 4MX36, 8ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-119
GS81284Z36GB-200	GSI	获取价格	119 BGA
GS81284Z36GB-200I	GSI	获取价格	119 BGA
GS81284Z36GB-200IV	GSI	获取价格	ZBT SRAM, 4MX36, 7.5ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA-11

与GS81284Z36B-300I相关文章

解析光耦仿真器：升级光耦合器技术的必要性
2024-11-18

53
英伟达新一代Blackwell GPU过热问题致交付延迟
2024-11-18

42
国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

70
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

66

产品中心

服务支持

精选活动

关于我们

帮助中心

GS81284Z36B-300I

GS81284Z36B-300I 数据手册

与GS81284Z36B-300I相关器件

与GS81284Z36B-300I相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

GS81284Z36B-300I

GS81284Z36B-300I 数据手册

与GS81284Z36B-300I相关器件

与GS81284Z36B-300I相关文章

您还可以找

您在本页遇到什么问题？