是否无铅: | 含铅 | 是否Rohs认证: | 不符合 |
生命周期: | Active | 零件包装代码: | BGA |
包装说明: | BGA, | 针数: | 119 |
Reach Compliance Code: | compliant | ECCN代码: | 3A991.B.2.B |
HTS代码: | 8542.32.00.41 | Factory Lead Time: | 25 weeks 5 days |
风险等级: | 5.22 | 最长访问时间: | 8 ns |
其他特性: | THIS PACKAGE IS ALSO AVAILABLE IN 2.19 MM SEATED HEIGHT | JESD-30 代码: | R-PBGA-B119 |
JESD-609代码: | e0 | 长度: | 22 mm |
内存密度: | 8388608 bit | 内存集成电路类型: | STANDARD SRAM |
内存宽度: | 8 | 湿度敏感等级: | 3 |
功能数量: | 1 | 端子数量: | 119 |
字数: | 1048576 words | 字数代码: | 1000000 |
工作模式: | ASYNCHRONOUS | 最高工作温度: | 70 °C |
最低工作温度: | 组织: | 1MX8 | |
封装主体材料: | PLASTIC/EPOXY | 封装代码: | BGA |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY |
并行/串行: | PARALLEL | 峰值回流温度(摄氏度): | NOT SPECIFIED |
认证状态: | Not Qualified | 座面最大高度: | 1.99 mm |
最大供电电压 (Vsup): | 3.6 V | 最小供电电压 (Vsup): | 3 V |
标称供电电压 (Vsup): | 3.3 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | COMMERCIAL |
端子面层: | TIN LEAD | 端子形式: | BALL |
端子节距: | 1.27 mm | 端子位置: | BOTTOM |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 宽度: | 14 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GS78108AB-8I | GSI |
获取价格 |
1M x 8 8Mb Asynchronous SRAM | |
GS78108AB-8IT | GSI |
获取价格 |
Standard SRAM, 1MX8, 8ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 | |
GS78108AB-8T | GSI |
获取价格 |
Standard SRAM, 1MX8, 8ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, FPBGA-119 | |
GS78108AGB-10 | GSI |
获取价格 |
1M x 8 8Mb Asynchronous SRAM | |
GS78108AGB-10I | GSI |
获取价格 |
1M x 8 8Mb Asynchronous SRAM | |
GS78108AGB-10IT | GSI |
获取价格 |
Standard SRAM, 1MX8, 10ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA | |
GS78108AGB-10T | GSI |
获取价格 |
Standard SRAM, 1MX8, 10ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA | |
GS78108AGB-12 | GSI |
获取价格 |
1M x 8 8Mb Asynchronous SRAM | |
GS78108AGB-12I | GSI |
获取价格 |
1M x 8 8Mb Asynchronous SRAM | |
GS78108AGB-12IT | GSI |
获取价格 |
Standard SRAM, 1MX8, 12ns, CMOS, PBGA119, 14 X 22 MM, 1.27 MM PITCH, ROHS COMPLIANT, FPBGA |