Datasheet > GP10ME/92

GP10ME/92

更新时间： 2024-11-13 10:12:47

品牌	Logo	应用领域
威世 - VISHAY		/
页数	文件大小	规格书
2页	26K
描述
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GP10ME/92 数据手册

GP10A thru GP10Y

Vishay Semiconductors

formerly General Semiconductor

Glass Passivated Junction Rectifiers

Reverse Voltage

50 to 1600V

Forward Current 1.0A

1.0 (25.4)

MIN.

DO-204AL (DO-41)

Features

0.107 (2.7)

0.080 (2.0)

DIA.

• Plastic package has Underwriters Laboratory

Flammability Classification 94V-0

• High temperature metallurgically bonded construction

• Cavity-free glass passivated junction

• Capable of meeting environmental standards of

MIL-S-19500

Dimensions in

inches and

(millimeters)

0.205 (5.2)

0.160 (4.1)

• 1.0 Ampere operation at T_A= 75°C and 55°C with no

thermal runaway

• Typical I_Rless than 0.1µA

• High temperature soldering guaranteed: 350°C/10 seconds,

0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension

1.0 (25.4)

MIN.

0.034 (0.86)

Mechanical Data

0.028 (0.71)

DIA.

Case: JEDEC DO-204AL, molded plastic over glass body

Terminals: Plated axial leads, solderable per

MIL-STD-750, Method 2026

0.026 (0.66)

0.023 (0.58)

NOTE: Lead diameter is

for suffix "E" part numbers

Polarity: Color band denotes cathode end

Mounting Position: Any

Weight: 0.012 oz., 0.3 g

*Glass-plastic encapsulation technique is covered by

Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306

Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

V W Y Unit

Maximum repetitive peak reverse voltage

V_RRM

50 to 1600V (See Fig. 5)

Maximum average forward rectified current

0.375" (9.5mm) lead length (See fig. 1)

I_F(AV)

I_FSM

1.0

Peak forward surge current 8.3ms single half sine-wave

superimposed on rated load (JEDEC Method)

Maximum full load reverse current, full cycle

average, 0.375" (9.5mm) lead lengths at T_A= 75°C

I_R(AV)

µA

Typical thermal resistance (Note 1)

R_θJA

°C/W

°C

Operating junction and storage temperature range

T_J, T_STG

–65 to +175

–65 to +150

Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.

Parameter

Symbol

V W Y Unit

Maximum instantaneous forward voltage at 1.0A

V_F

1.1

1.2

1.3

Maximum DC reverse current

at rated DC blocking voltage

T_A= 25°C

T_A= 125°C

5.0

I_R

µA

Typical reverse recovery time at

I_F= 0.5A, I_R= 1.0A, I_rr= 0.25A

t_rr

3.0

7.0

µs

Typical junction capacitance at 4.0V, 1MHz

C_J

8.0

5.0

Note: (1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted

Document Number 88637

5-Mar-02

www.vishay.com

中文翻译

下载PDF

与GP10ME/92相关器件

型号	品牌	获取价格	描述	数据表
GP10ME/93	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, PLASTIC, DO-41, 2 PIN
GP10ME3	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, LEAD FREE, PLASTIC, DO-41
GP10M-E3	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM),
GP10M-E3/54	VISHAY	获取价格	DIODE GEN PURP 1KV 1A DO204AL
GP10M-E3/73	VISHAY	获取价格	Diode Switching 1KV 1A 2-Pin DO-204AL Ammo
GP10ME-E3/23	VISHAY	获取价格	Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC,
GP10ME-E3/53	VISHAY	获取价格	DIODE GEN PURP 1KV 1A DO204AL
GP10ME-E3/54	VISHAY	获取价格	DIODE GEN PURP 1KV 1A DO204AL
GP10ME-E3/73	VISHAY	获取价格	DIODE GEN PURP 1KV 1A DO204AL
GP10MEHE3/53	VISHAY	获取价格	DIODE GEN PURP 1KV 1A DO204AL

与GP10ME/92相关文章

国产厂商思特威CMOS图像传感器芯片单月出货超1亿颗，技术创新引领行业发展
2024-11-14

23
台积电5nm和3nm产能利用率达100%，半导体行业景气度持续攀升
2024-11-14

8
AMD宣布全球裁员约1000人，调整战略聚焦增长
2024-11-14

9
英伟达新AI芯片Rubin或提前半年亮相
2024-11-05

32

产品中心

服务支持

精选活动

关于我们

帮助中心

GP10ME/92

GP10ME/92 数据手册

与GP10ME/92相关器件

与GP10ME/92相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

GP10ME/92

GP10ME/92 数据手册

与GP10ME/92相关器件

与GP10ME/92相关文章

您还可以找

您在本页遇到什么问题？