Datasheet > GM71C4100CT-60

GM71C4100CT-60

更新时间： 2024-11-02 23:53:47

品牌	Logo	应用领域
其他 - ETC		内存集成电路光电二极管动态存储器
页数	文件大小	规格书
9页	106K
描述
x1 Fast Page Mode DRAM

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数据手册

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GM71C4100CT-60 数据手册

GM71C(S)4100C/CL

4,194,304 WORDS x 1BIT

LG Semicon Co.,Ltd.

CMOS DYNAMIC RAM

Description

Features

The GM71C(S)4100C/CL is the new generation

dynamic RAM organized 4,194,304 words x 1 bit.

GM71C(S)4100C/CL has realized higher density,

higher performance and various functions by

utilizing advanced CMOS process technology. The

GM71C(S)4100C/CL offers Fast Page Mode as a

high speed access Mode. Multiplexed address

inputs permit the GM71C(S)4100C/CL to the

packaged in a standard 300mil 20(26) pin plastic

SOJ and standard 300mil 20(26) pin plastic TSOP

II. The package size provides high system bit

densities and is compatible with widely available

automated testing and insertion equipment. System

oriented features include single power supply of

5V+/-10% tolerance, direct interfacing capability

with high performance logic families such as

Schottky TTL.

* 4,194,304 Words x 1 Bit Organization

* Fast Page Mode Capability

* Single Power Supply (5V+/-10%)

* Fast Access Time & Cycle Time

(Unit: ns)

RAC

CAC

110

130

150

GM71C(S)4100C/CL-60

GM71C(S)4100C/CL-70

GM71C(S)4100C/CL-80

* Low Power

Active : 605/550/495mW (MAX)

Standby : 5.5mW (CMOS level : MAX)

1.1mW (L-version)

* RAS Only Refresh, CAS before RAS Refresh,

Hidden Refresh Capability

* All inputs and outputs TTL Compatible

* 1024 Refresh Cycles/16ms

* 1024 Refresh Cycles/128ms (L-version)

* Battery Back Up Operation (L-version)

Pin Configuration

20 (26) SOJ

20 (26) TSOP II

DIN

RAS

VSS

DIN

RAS

VSS

DIN

RAS

19 DOUT

18 CAS

19 DOUT

18 CAS

DOUT 19

CAS 18

17 NC

NC 17

A10

15 A8

14 A7

15 A8

14 A7

A8 15

A7 14

VCC 10

11 A4

VCC 10

11 A4

A4 11

10 VCC

NORMAL TYPE

REVERSE TYPE

(Top View)

12 3 4 5 6 7...9

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与GM71C4100CT-60相关器件

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